ISL6620ACBZ

ISL6620ACBZ

對比
ISL6620ACBZ
IC GATE DRVR HALF-BRIDGE 8SOIC
對比

¥11.00

價格更新:一個月前
現貨供應: 3951
45
為45個國家的客戶提供服務
1000+
全球製造商
$140M
5年增長1.4億美元
50.0M+
5年內配送了5000萬個元件
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics Corporation 通過完整的半導體解決方案提供值得信賴的嵌入式設計創新,使數十億互聯的智能設備能夠改善人們安全可靠的工作和生活方式。 作為微控制器、模擬、電源和 SoC 產品及集成平台的全球領導者,瑞薩為廣泛的汽車、工業、家用電子、辦公自動化和信息通信技術應用提供專業知識、質量和全面的解決方案,以幫助塑造一個 無限的未來。

查看所有産品從 Renesas Electronics America Inc.
ISL6620ACBZ Products
The ISL6620, ISL6620A is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6620, ISL6620A is specifically designed to work with Intersil VR11.1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6620, ISL6620A detects a PSI protocol sent by an Intersil VR11.1 controller, it activates Diode Emulation (DE) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode.The IC is biased by a single low voltage supply (5V), minimizing driving losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs.To further enhance light load efficiency, ISL6620, ISL6620A enables diode emulation operation during PSI mode. This allows Discontinuous Conduction Mode (DCM) by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking current.An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6620, ISL6620A has a 20kΩ integrated high-side gate-to-source resistor to prevent self turn-on due to high input bus dV/dt.

Feature

  • Dual MOSFET Drives for Synchronous Rectified Bridge
  • Advanced Adaptive Zero Shoot-Through Protection
  • 36V Internal Bootstrap Schottky Diode
  • Advanced PWM Protocol (Patent Pending) to Support PSI Mode, Diode Emulation, Three-State Operation
  • Diode Emulation For Enhanced Light Load Efficiency
  • Bootstrap Capacitor Overcharging Prevention
  • Supports High Switching Frequency
  • 4A Sinking Current Capability
  • Fast Rise/Fall Times and Low Propagation Delays
  • VCC Undervoltage Protection
  • Enable Input and Power-On Reset
  • Expandable Bottom Copper Pad for Enhanced Heat Sinking
  • DFN Package:
  • Compliant to JEDEC PUB95 MO-220 DFN
  • Dual Flat No Leads
  • Package Outline
  • Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile
  • Pb-Free (RoHS Compliant)

產品屬性

類型 描述 全選
包裝 管件
產品狀態 停產
可編程 未驗證
驅動配置 半橋
通道類型 同步
驅動器數 2
柵極類型 N 溝道 MOSFET
電壓 - 供電 4.5V ~ 5.5V
電流 - 峯值輸出(灌入,拉出) 2A,2A
輸入類型 非反相
高壓側電壓 - 最大值(自舉) 36 V
上升/下降時間(典型值) 8ns,8ns
工作温度 0°C ~ 125°C(TJ)
安裝類型 表面貼裝型
封裝/外殼 8-SOIC(0.154",3.90mm 寬)
供應商器件封裝 8-SOIC

部落格

¥11.00

價格更新:一個月前
現貨供應: 3951
Renesas Electronics America Inc.

Renesas Electronics America Inc.

Renesas Electronics Corporation 通過完整的半導體解決方案提供值得信賴的嵌入式設計創新,使數十億互聯的智能設備能夠改善人們安全可靠的工作和生活方式。 作為微控制器、模擬、電源和 SoC 產品及集成平台的全球領導者,瑞薩為廣泛的汽車、工業、家用電子、辦公自動化和信息通信技術應用提供專業知識、質量和全面的解決方案,以幫助塑造一個 無限的未來。

查看所有産品從 Renesas Electronics America Inc.

部落格