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JANS1N6642UBCC Microchip Technology
Microchip Technology
Microchip Technology Inc. 是微控制器和模擬半導體的領先供應商,為全球數以千計的不同客户應用提供低風險產品開發、更低的系統總成本和更快的上市時間。 Microchip 總部位於亞利桑那州錢德勒,提供出色的技術支持以及可靠的交付和質量。
查看所有産品從 Microchip TechnologyHey there! If you're on the hunt for some Microchip Technology parts like the JANS1N6642UBCC, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the JANS1N6642UBCC, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The JANS1N6638 is DIODE GEN PURP 125V 300MA DO204, that includes Military, MIL-PRF-19500/578 Series, they are designed to operate with a Bulk Packaging, Package Case is shown on datasheet note for use in a DO-204AH, DO-35, Axial, that offers Mounting Type features such as Through Hole, Speed is designed to work in Fast Recovery = 200mA (Io), as well as the Standard Diode Type, the device can also be used as 500nA @ 125V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.1V @ 200mA, the device is offered in 125V Voltage DC Reverse Vr Max, the device has a 300mA of Current Average Rectified Io, and Reverse Recovery Time trr is 4.5ns, and the Capacitance Vr F is 2.5pF @ 0V, 1MHz, it has an Operating Temperature Junction range of -65°C ~ 175°C.
The JANS1N6642 is DIODE GEN PURP 75V 300MA DO204AH, that includes 1.2V @ 100mA Voltage Forward Vf Max If, they are designed to operate with a 75V Voltage DC Reverse Vr Max, Speed is shown on datasheet note for use in a Fast Recovery = 200mA (Io), that offers Series features such as Military, MIL-PRF-19500/578, Reverse Recovery Time trr is designed to work in 5ns, as well as the Bulk Packaging, the device can also be used as DO-204AH, DO-35, Axial Package Case, it has an Operating Temperature Junction range of -65°C ~ 175°C, the device is offered in Through Hole Mounting Type, the device has a Standard of Diode Type, and Current Reverse Leakage Vr is 500nA @ 75V, and the Current Average Rectified Io is 300mA, and Capacitance Vr F is 5pF @ 0V, 1MHz.
JANS1N6640 with circuit diagram, that includes 300mA Current Average Rectified Io, they are designed to operate with a 100nA @ 50V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Through Hole, it has an Operating Temperature Junction range of -65°C ~ 175°C, as well as the DO-204AH, DO-35, Axial Package Case, the device can also be used as Bulk Packaging. In addition, the Reverse Recovery Time trr is 4ns, the device is offered in Military, MIL-PRF-19500/609 Series, the device has a Fast Recovery = 200mA (Io) of Speed, and Voltage DC Reverse Vr Max is 50V, and the Voltage Forward Vf Max If is 1V @ 200mA.
JANS1N6636US with EDA / CAD Models, that includes Through Hole Mounting Type, they are designed to operate with a Military, MIL-PRF-19500/356 Series, Package Case is shown on datasheet note for use in a E, Axial, that offers Supplier Device Package features such as E, Axial, Packaging is designed to work in Bulk, it has an Operating Temperature range of -65°C ~ 175°C, the device can also be used as 5W Power Max. In addition, the Voltage Zener Nom Vz is 4.7V, the device is offered in 20μA @ 1V Current Reverse Leakage Vr, the device has a 2 Ohm of Impedance Max Zzt, and Voltage Forward Vf Max If is 1.5V @ 1A, and the Tolerance is ±5%.
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製造商零件編號 | 價格(¥) | 現有數量 | |
---|---|---|---|
JANS1N6640USDIODE GEN PURP 50V 300MA D-5D | 253.94 |
2758
市場 | |
JANS1N5806DIODE GEN PURP 150V 1A AXIAL | 260.00 |
250
市場 | |
JANS1N3595USDIODE GEN PURP 200MA B SQ-MELF | 672.06 |
370
市場 | |
JANS1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF | 1100.00 |
257
市場 |
類型 | 描述 | 全選 |
---|---|---|
包裝 | 散裝 | |
產品狀態 | 在售 | |
技術 | 標準 | |
不同 If 時電壓 - 正向 (Vf) | 1.2 V @ 100 mA | |
速度 | 快速恢復 =< 500ns,> 200mA(Io) | |
反向恢復時間 (trr) | 5 ns | |
安裝類型 | 表面貼裝型 | |
封裝/外殼 | 3-SMD,無引線 | |
供應商器件封裝 | UB |
Microchip Technology
Microchip Technology Inc. 是微控制器和模擬半導體的領先供應商,為全球數以千計的不同客户應用提供低風險產品開發、更低的系統總成本和更快的上市時間。 Microchip 總部位於亞利桑那州錢德勒,提供出色的技術支持以及可靠的交付和質量。
查看所有産品從 Microchip TechnologyDIODE GEN PURP UB
DIODE GEN PURP UB
DIODE GEN PURP 75V 200MA DO213AA
DIODE GEN PURP 75V 300MA D-5D
DIODE SIC 1.2KV 109A TO247-3
DIODE SCHOTTKY 60V 5A DO214AB
DIODE GEN PURP 1KV 60A TO247
DIODE SIL CARB 700V 30A TO220-2
DIODE GEN PURP 75V 200MA DO213AA
DIODE SCHOTTKY 40V 5A POWERMITE3