FQPF2P25

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The FQPF2N80YDTU is MOSFET NCH 800V 2A MOSFET, that includes Tube Packaging, they are designed to operate with a 0.090478 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 35 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 28 ns, and Rise Time is 30 ns, and the Vgs Gate Source Voltage is 30 V, and Id Continuous Drain Current is 1.5 A, and the Vds Drain Source Breakdown Voltage is 800 V, and Vgs th Gate Source Threshold Voltage is 5 V, and the Rds On Drain Source Resistance is 4.9 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 25 ns, and Typical Turn On Delay Time is 12 ns, and the Qg Gate Charge is 12 nC, and Forward Transconductance Min is 2.2 S.

The FQPF2N70 is MOSFET N-CH 700V 2A TO-220F, that includes 30 V Vgs Gate Source Voltage, they are designed to operate with a 700 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.080072 oz, that offers Typical Turn On Delay Time features such as 30 ns, Typical Turn Off Delay Time is designed to work in 50 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 80 ns Rise Time, the device has a 6.3 Ohms of Rds On Drain Source Resistance, and Pd Power Dissipation is 28 W, and the Part Aliases is FQPF2N70_NL, and Packaging is Tube, and the Package Case is TO-220-3, and Number of Channels is 1 Channel, and the Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 2 A, and the Forward Transconductance Min is 2.45 S, and Fall Time is 70 ns, and the Configuration is Single, and Channel Mode is Enhancement.

The FQPF2N80 is MOSFET N-CH 800V 1.5A TO-220F, that includes Enhancement Channel Mode, they are designed to operate with a Single Configuration, Fall Time is shown on datasheet note for use in a 28 ns, that offers Forward Transconductance Min features such as 2.2 S, Id Continuous Drain Current is designed to work in 1.5 A, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C. In addition, the Mounting Style is Through Hole, the device is offered in 1 Channel Number of Channels, the device has a TO-220-3 of Package Case, and Packaging is Tube, and the Pd Power Dissipation is 35 W, and Rds On Drain Source Resistance is 6.3 Ohms, and the Rise Time is 30 ns, and Technology is Si, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Typical Turn Off Delay Time is 25 ns, and Typical Turn On Delay Time is 12 ns, and the Unit Weight is 0.080072 oz, and Vds Drain Source Breakdown Voltage is 800 V, and the Vgs Gate Source Voltage is 30 V.

The FQPF2N90 is MOSFET N-CH 900V 1.4A TO-220F manufactured by FSC. The FQPF2N90 is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 900V 1.4A TO-220F, N-Channel 900V 1.4A (Tc) 35W (Tc) Through Hole TO-220F, Trans MOSFET N-CH 900V 1.4A 3-Pin(3+Tab) TO-220F Rail.