SI5518D-B14438-GMR

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The SI5515DC-T1-E3 is MOSFET N/P-CH 20V 4.4A 1206-8, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI5515DC-T1, that offers Unit Weight features such as 0.002998 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SMD, Flat Lead Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 2 Channel of Number of Channels, and Supplier Device Package is 1206-8 ChipFET?, and the Configuration is N-Channel P-Channel, and FET Type is N and P-Channel, and the Power Max is 1.1W, and Transistor Type is 1 N-Channel 1 P-Channel, and the Drain to Source Voltage Vdss is 20V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 4.4A, 3A, and Rds On Max Id Vgs is 40 mOhm @ 4.4A, 4.5V, and the Vgs th Max Id is 1V @ 250μA, and Gate Charge Qg Vgs is 7.5nC @ 4.5V, and the Pd Power Dissipation is 1.1 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 36 ns 32 ns, and the Rise Time is 36 ns 32 ns, and Vgs Gate Source Voltage is 8 V, and the Id Continuous Drain Current is 4.4 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 32 mOhms 69 mOhms, and Transistor Polarity is N-Channel P-Channel, and the Typical Turn Off Delay Time is 30 ns 42 ns, and Typical Turn On Delay Time is 20 ns 18 ns, and the Channel Mode is Enhancement.

The SI5517DU-T1-GE3 is MOSFET N/P-CH 20V 6A CHIPFET, that includes 1V @ 250μA Vgs th Max Id, they are designed to operate with a 8 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 20 V, that offers Typical Turn On Delay Time features such as 20 ns 8 ns, Typical Turn Off Delay Time is designed to work in 40 ns 40 ns, as well as the 1 N-Channel 1 P-Channel Transistor Type, the device can also be used as N-Channel P-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in PowerPAKR ChipFet Dual Supplier Device Package, the device has a TrenchFETR of Series, and Rise Time is 65 ns 35 ns, and the Rds On Max Id Vgs is 39 mOhm @ 4.4A, 4.5V, and Rds On Drain Source Resistance is 32 mOhms 60 mOhms, and the Power Max is 8.3W, and Pd Power Dissipation is 2.3 W, and the Part Aliases is SI5517DU-GE3, and Packaging is Digi-ReelR Alternate Packaging, and the Package Case is PowerPAKR ChipFET? Dual, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and the Number of Channels is 2 Channel, and Mounting Style is SMD/SMT, and the Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Input Capacitance Ciss Vds is 520pF @ 10V, and the Id Continuous Drain Current is 7.2 A, and Gate Charge Qg Vgs is 16nC @ 8V, and the FET Type is N and P-Channel, and FET Feature is Logic Level Gate, and the Fall Time is 10 ns 55 ns, and Drain to Source Voltage Vdss is 20V, and the Current Continuous Drain Id 25°C is 6A, and Configuration is 1 N-Channel 1 P-Channel, and the Channel Mode is Enhancement.

The SI5515DC-T1-GE3 is MOSFET N/P-CH 20V 4.4A 1206-8, that includes 1 N-Channel 1 P-Channel Configuration, they are designed to operate with a 4.4A, 3A Current Continuous Drain Id 25°C, Drain to Source Voltage Vdss is shown on datasheet note for use in a 20V, that offers FET Feature features such as Logic Level Gate, FET Type is designed to work in N and P-Channel, as well as the 7.5nC @ 4.5V Gate Charge Qg Vgs, the device can also be used as 4.4 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a Surface Mount of Mounting Type, and Mounting Style is SMD/SMT, and the Number of Channels is 2 Channel, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and the Package Case is 8-SMD, Flat Lead, and Packaging is Tape & Reel (TR), and the Pd Power Dissipation is 1.1 W, and Power Max is 1.1W, and the Rds On Max Id Vgs is 40 mOhm @ 4.4A, 4.5V, and Series is TrenchFETR, and the Supplier Device Package is 1206-8 ChipFET?, and Technology is Si, and the Transistor Polarity is N-Channel P-Channel, and Transistor Type is 1 N-Channel 1 P-Channel, and the Unit Weight is 0.002998 oz, and Vds Drain Source Breakdown Voltage is 20 V, and the Vgs Gate Source Voltage is 8 V, and Vgs th Max Id is 1V @ 250μA.

The SI5517DU-T1-E3 is MOSFET N/P-CH 20V 6A CHIPFET, that includes TrenchFETR Series, they are designed to operate with a Surface Mount Mounting Type, Package Case is shown on datasheet note for use in a PowerPAKR ChipFET? Dual, that offers Supplier Device Package features such as PowerPAKR ChipFet Dual, FET Type is designed to work in N and P-Channel, as well as the Logic Level Gate FET Feature, the device can also be used as Digi-ReelR Packaging. In addition, the Power Max is 8.3W, the device is offered in 6A Current Continuous Drain Id 25°C, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Input Capacitance Ciss Vds is 520pF @ 10V, and the Rds On Max Id Vgs is 39 mOhm @ 4.4A, 4.5V, and Drain to Source Voltage Vdss is 20V, and the Vgs th Max Id is 1V @ 250μA, and Gate Charge Qg Vgs is 16nC @ 8V.