TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V | |
Vgs(th) (Max) @ Id | 2V @ 20µA | |
Rds On (Max) @ Id, Vgs | 9.1mOhm @ 50A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
Supplier Device Package | PG-TO252-3-11 | |
Drain to Source Voltage (Vdss) | 30 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 58W (Tc) | |
Vgs (Max) | ±20V | |
Series | OptiMOS™ | |
Package | Tape & Reel (TR) | |
Product Status | Obsolete |
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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