These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
A pair of IRF7807VD2PBF devices provides the best cost/performance solution for system voltages, such as 3.3V and 5V
• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses
TYPE | DESCRIPTION | Select all |
---|---|---|
FET Feature | Schottky Diode (Isolated) | |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 7A, 4.5V | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Current - Continuous Drain (Id) @ 25°C | 8.3A (Ta) | |
Supplier Device Package | 8-SO | |
Drain to Source Voltage (Vdss) | 30 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 2.5W (Ta) | |
Vgs (Max) | ±20V | |
Series | FETKY™ | |
Package | Tube | |
Product Status | Obsolete |
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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