IRF7807VD2PBF

IRF7807VD2PBF

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IRF7807VD2PBF
MOSFET N-CH 30V 8.3A 8SO
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45
Serves customers in 45 countries
1000+
Worldwide Manufacturers
$140M
$140M Growth in 5 Years
50.0M+
50M Parts Shipped in 5 Years
IRF7807VD2PBF Products

These new devices employ advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.
A pair of IRF7807VD2PBF devices provides the best cost/performance solution for system voltages, such as 3.3V and 5V

• N Channel Application Specific MOSFETs
• Ideal for Mobile DC-DC Converters
• Low Conduction Losses
• Low Switching Losses

Feature

F7807

Product Attributes

TYPE DESCRIPTION Select all
FET Feature Schottky Diode (Isolated)
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V
Vgs(th) (Max) @ Id 1V @ 250µA
Rds On (Max) @ Id, Vgs 25mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Package / Case 8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta)
Supplier Device Package 8-SO
Drain to Source Voltage (Vdss) 30 V
Mounting Type Surface Mount
Technology MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ)
FET Type N-Channel
Power Dissipation (Max) 2.5W (Ta)
Vgs (Max) ±20V
Series FETKY™
Package Tube
Product Status Obsolete

Price negotiable

Price update:a months ago
Available in stock: 4808
Infineon Technologies

Infineon Technologies

Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.

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