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The BG 3130R H6327 is RF MOSFET Transistors RF MOSFETS, that includes BG3130 Series, they are designed to operate with a RF Small Signal MOSFET Type, Packaging is shown on datasheet note for use in a Reel, that offers Part Aliases features such as BG3130RH6327XT BG3130RH6327XTSA1 SP000753496, Unit Weight is designed to work in 0.000212 oz, as well as the SMD/SMT Mounting Style, the device can also be used as SOT-363 Package Case. In addition, the Technology is Si, the device is offered in 24 dB Gain, the device has a 200 mW of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, and the Operating Frequency is 800 MHz, and Vgs Gate Source Voltage is 6 V, and the Id Continuous Drain Current is 25 mA, and Vds Drain Source Breakdown Voltage is 12 V, and the Transistor Polarity is N-Channel.
The BG 3130 H6327 is RF MOSFET Transistors RF MOSFETS, that includes 6 V Vgs Gate Source Voltage, they are designed to operate with a 12 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.000212 oz, that offers Type features such as RF Small Signal MOSFET, Transistor Polarity is designed to work in N-Channel, as well as the Si Technology, the device can also be used as BG3130 Series. In addition, the Pd Power Dissipation is 200 mW, the device is offered in BG3130H6327XT BG3130H6327XTSA1 SP000753494 Part Aliases, the device has a Reel of Packaging, and Package Case is SOT-363, and the Operating Frequency is 800 MHz, and Mounting Style is SMD/SMT, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 25 mA, and the Gain is 24 dB.
The BFY90 is TRANS RF NPN 200MW 50MA TO72, that includes 50mA Current Collector Ic Max, they are designed to operate with a 20 @ 25mA, 1V DC Current Gain hFE Min Ic Vce, Frequency Transition is shown on datasheet note for use in a 1.3GHz, that offers Gain features such as 20dB, Mounting Type is designed to work in Through Hole, as well as the 2.5dB ~ 5dB @ 500MHz Noise Figure dB Typ f, the device can also be used as TO-206AF, TO-72-4 Metal Can Package Case. In addition, the Packaging is Bulk, the device is offered in 200mW Power Max, the device has a BFY90 of Series, and Supplier Device Package is TO-72, and the Transistor Type is NPN, and Voltage Collector Emitter Breakdown Max is 15V.
BG with EDA / CAD Models manufactured by VISHAY. The BG is available in SMA Package, is part of the IC Chips.