The HIP2100EIBZ is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.
TYPE | DESCRIPTION | Select all |
---|---|---|
Voltage - Supply | 9V ~ 14V | |
Logic Voltage - VIL, VIH | 4V, 7V | |
Current - Peak Output (Source, Sink) | 2A, 2A | |
Input Type | Non-Inverting | |
Package | Tube | |
High Side Voltage - Max (Bootstrap) | 114 V | |
Product Status | Active | |
Rise / Fall Time (Typ) | 10ns, 10ns | |
Programmable | Not Verified | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Driven Configuration | Half-Bridge | |
Mounting Type | Surface Mount | |
Channel Type | Independent | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | |
Number of Drivers | 2 | |
Supplier Device Package | 8-SOIC-EP | |
Gate Type | N-Channel MOSFET |
Intersil
Commencing January 1, 2018, Renesas and Intersil will unify, augmenting semiconductor potentials. This fusion melds Renesas' lauded MCU and SoC proficiencies with Intersil's power management and precision analog mastery. Resultant growth spans automotive, industrial, and broader domains, facilitating agile response to patrons' needs. The amalgamation, initiated in February 2017, blossomed in July under "One Global Renesas," catalyzing a synergistic effect. Join Renesas in fortifying its semiconductor market eminence.
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