HIP2100EIBZ

HIP2100EIBZ

Compare
Intersil
HIP2100EIBZ
IC GATE DRVR HALF-BRIDGE 8SOIC
Compare
45
Serves customers in 45 countries
1000+
Worldwide Manufacturers
$140M
$140M Growth in 5 Years
50.0M+
50M Parts Shipped in 5 Years
HIP2100EIBZ Products

The HIP2100EIBZ is a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Undervoltage protection on both the low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs. A new level-shifter topology yields the low-power benefits of pulsed operation with the safety of DC operation. Unlike some competitors, the high-side output returns to its correct state after a momentary undervoltage of the high-side supply.

Feature

  • Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat No Leads - Package Outline
  • Near Chip Scale Package Footprint, which Improves PCB Efficiency and has a Thinner Profile
APPLICATIONS
  • Telecom Half Bridge Power Supplies
  • Avionics DC/DC Converters
  • Two-Switch Forward Converters
  • Active Clamp Forward Converters
  • Product Attributes

    TYPE DESCRIPTION Select all
    Voltage - Supply 9V ~ 14V
    Logic Voltage - VIL, VIH 4V, 7V
    Current - Peak Output (Source, Sink) 2A, 2A
    Input Type Non-Inverting
    Package Tube
    High Side Voltage - Max (Bootstrap) 114 V
    Product Status Active
    Rise / Fall Time (Typ) 10ns, 10ns
    Programmable Not Verified
    Operating Temperature -55°C ~ 150°C (TJ)
    Driven Configuration Half-Bridge
    Mounting Type Surface Mount
    Channel Type Independent
    Package / Case 8-SOIC (0.154", 3.90mm Width) Exposed Pad
    Number of Drivers 2
    Supplier Device Package 8-SOIC-EP
    Gate Type N-Channel MOSFET

    $40.99

    Price update:a months ago
    Available in stock: 1960
    Intersil

    Intersil

    Commencing January 1, 2018, Renesas and Intersil will unify, augmenting semiconductor potentials. This fusion melds Renesas' lauded MCU and SoC proficiencies with Intersil's power management and precision analog mastery. Resultant growth spans automotive, industrial, and broader domains, facilitating agile response to patrons' needs. The amalgamation, initiated in February 2017, blossomed in July under "One Global Renesas," catalyzing a synergistic effect. Join Renesas in fortifying its semiconductor market eminence.

    View All Product from Intersil

    Blog