M09000G-14

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MAGX-000035-01000P with pin details, that includes MAGX Series, they are designed to operate with a Tray Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, it has an Operating Temperature Range range of - 40 C to + 95 C, Technology is designed to work in GaN SiC, as well as the Single Configuration, the device can also be used as HEMT Transistor Type. In addition, the Gain is 14 dB, the device is offered in 10 W Output Power, the device has a 12 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 95 C, it has an Minimum Operating Temperature range of - 40 C, and Operating Frequency is 3.5 GHz, and the Id Continuous Drain Current is 500 mA, and Vds Drain Source Breakdown Voltage is 65 V, and the Transistor Polarity is N-Channel, and Forward Transconductance Min is 0.2 S.

MAGX-000035-01000TP with user guide, that includes 65 V Vds Drain Source Breakdown Voltage, they are designed to operate with a HEMT Transistor Type, Transistor Polarity is shown on datasheet note for use in a N-Channel, that offers Technology features such as GaN SiC, Series is designed to work in MAGX, as well as the 12 W Pd Power Dissipation, the device can also be used as Reel Packaging. In addition, the Output Power is 10 W, it has an Operating Temperature Range range of - 40 C to + 95 C, the device has a 3.5 GHz of Operating Frequency, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 40 C, it has an Maximum Operating Temperature range of + 95 C, and the Id Continuous Drain Current is 500 mA, and Gain is 14 dB, and the Forward Transconductance Min is 0.2 S, and Configuration is Single.

MAGX-000035-015000 with circuit diagram, that includes 0.35 S Forward Transconductance Min, they are designed to operate with a 15.5 dB Gain, Id Continuous Drain Current is shown on datasheet note for use in a 800 mA, it has an Maximum Operating Temperature range of + 95 C, it has an Minimum Operating Temperature range of - 40 C, as well as the SMD/SMT Mounting Style, the device can also be used as DC to 3.5 GHz Operating Frequency, it has an Operating Temperature Range range of - 40 C to + 95 C, the device is offered in 17.7 W Output Power, the device has a Tray of Packaging, and Pd Power Dissipation is 10.3 W, and the Series is MAGX, and Technology is GaN SiC, and the Transistor Type is HEMT, and Vgs th Gate Source Threshold Voltage is - 3 V.

The MAGX-000035-010000 is RF JFET Transistors .03-3.5GHz 10W CW Pin 25 dBm GaN, that includes Tray Packaging, they are designed to operate with a N-Channel Transistor Polarity, Transistor Type is shown on datasheet note for use in a HEMT, that offers Technology features such as GaN SiC, Output Power is designed to work in 10 W.