The devices are manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively.
TYPE | DESCRIPTION | Select all |
---|---|---|
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 2V | |
Current - Collector Cutoff (Max) | 100µA (ICBO) | |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A | |
Voltage - Collector Emitter Breakdown (Max) | 80 V | |
Current - Collector (Ic) (Max) | 2 A | |
Supplier Device Package | SOT-32-3 | |
Transistor Type | NPN | |
Package / Case | TO-225AA, TO-126-3 | |
Mounting Type | Through Hole | |
Operating Temperature | 150°C (TJ) | |
Power - Max | 25 W | |
Package | Tube | |
Product Status | Active |
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