This device is a high voltage fast-switching NPN power transistor, manufactured using diffused collector planar technology for high switching speeds.
It employs a base island structure with planar edge termination to enhance switching speeds, while maintaining a wide RBSOA.
TYPE | DESCRIPTION | Select all |
---|---|---|
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V | |
Current - Collector Cutoff (Max) | 10µA (ICBO) | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 6mA, 50mA | |
Voltage - Collector Emitter Breakdown (Max) | 500 V | |
Current - Collector (Ic) (Max) | 500 mA | |
Supplier Device Package | SOT-23 | |
Transistor Type | NPN | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Mounting Type | Surface Mount | |
Operating Temperature | 150°C (TJ) | |
Power - Max | 500 mW | |
Package | Tape & Reel (TR) | |
Product Status | Active |
STMicroelectronics
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