These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V | |
Vgs(th) (Max) @ Id | 5V @ 250µA | |
Rds On (Max) @ Id, Vgs | 160mOhm @ 10.5A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Package / Case | TO-247-3 | |
Current - Continuous Drain (Id) @ 25°C | 21A (Tc) | |
Supplier Device Package | TO-247-3 | |
Drain to Source Voltage (Vdss) | 600 V | |
Mounting Type | Through Hole | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 170W (Tc) | |
Vgs (Max) | ±25V | |
Series | MDmesh™ DM2 | |
Package | Tube | |
Product Status | Active |
STMicroelectronics
STMicroelectronics is a leading global semiconductor company known for pioneering cutting-edge solutions across microelectronics. With unmatched silicon expertise, potent manufacturing, rich IP, and strategic alliances, it's at the forefront of SoC technology, guiding convergence trends.
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