STW28N60DM2

STW28N60DM2

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STW28N60DM2
MOSFET N-CH 600V 21A TO247
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45
Serves customers in 45 countries
1000+
Worldwide Manufacturers
$140M
$140M Growth in 5 Years
50.0M+
50M Parts Shipped in 5 Years
STW28N60DM2 actual photo Pinout

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Feature

  • 100%avalanchetested
  • Lowinputcapacitanceandgatecharge
  • Lowgateinputresistance

Product Attributes

TYPE DESCRIPTION Select all
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs(th) (Max) @ Id 5V @ 250µA
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 600 V
Mounting Type Through Hole
Technology MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ)
FET Type N-Channel
Power Dissipation (Max) 170W (Tc)
Vgs (Max) ±25V
Series MDmesh™ DM2
Package Tube
Product Status Active

$20.72

Price update:a months ago
Available in stock: 716
STMicroelectronics

STMicroelectronics

STMicroelectronics is a leading global semiconductor company known for pioneering cutting-edge solutions across microelectronics. With unmatched silicon expertise, potent manufacturing, rich IP, and strategic alliances, it's at the forefront of SoC technology, guiding convergence trends.

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