FQB5N40TM

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The FQB55N10TM is MOSFET N-CH 100V 55A D2PAK, that includes Reel Packaging, they are designed to operate with a 0.046296 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 3.75 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 140 ns, and Rise Time is 250 ns, and the Vgs Gate Source Voltage is 25 V, and Id Continuous Drain Current is 55 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Rds On Drain Source Resistance is 26 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 110 ns, and the Typical Turn On Delay Time is 25 ns, and Forward Transconductance Min is 38 S, and the Channel Mode is Enhancement.

The FQB55N06TM is MOSFET N-CH 60V 55A D2PAK manufactured by FAIRCHILD. The FQB55N06TM is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Package, is part of the FETs - Single, , and with support for MOSFET N-CH 60V 55A D2PAK, N-Channel 60V 55A (Tc) 3.75W (Ta), 133W (Tc) Surface Mount D?PAK (TO-263AB).

FQB55N10 with circuit diagram manufactured by FAIRCHILD. The FQB55N10 is available in TO-263 Package, is part of the FETs - Single.

FQB5N20 with EDA / CAD Models manufactured by FSC. The FQB5N20 is available in TO-263 Package, is part of the FETs - Single.