NGTB40N120FLWG datasheet
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NGTB40N120FLWG onsemi
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onsemi 正在推动节能创新,帮助客户减少全球能源使用。 该公司提供全面的节能电源和信号管理、逻辑、分立和定制解决方案组合,帮助设计工程师解决他们在汽车、通信、计算、消费、工业、LED 照明、医疗、军事/航空航天和电源领域的独特设计挑战 供应应用。 onsemi 在北美、欧洲和亚太地区的主要市场运营响应迅速、可靠、世界一流的供应链和质量计划,以及制造设施、销售办事处和设计中心网络。
查看所有产品从 onsemiHey there! If you're on the hunt for some onsemi parts like the NGTB40N120FLWG, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the NGTB40N120FLWG, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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NGTB35N60FL2WG with pin details, that includes Tube Packaging, they are designed to operate with a 1.340411 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-247-3, Input Type is designed to work in Standard, as well as the Through Hole Mounting Type, the device can also be used as TO-247 Supplier Device Package. In addition, the Configuration is Single, the device is offered in 300W Power Max, the device has a 68ns of Reverse Recovery Time trr, and Current Collector Ic Max is 70A, and the Voltage Collector Emitter Breakdown Max is 600V, and IGBT Type is Trench Field Stop, and the Current Collector Pulsed Icm is 120A, and Vce on Max Vge Ic is 2V @ 15V, 35A, and the Switching Energy is 840μJ (on), 280μJ (off), and Gate Charge is 125nC, and the Td on off 25°C is 72ns/132ns, and Test Condition is 400V, 35A, 10 Ohm, 15V, and the Pd Power Dissipation is 300 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Collector Emitter Voltage VCEO Max is 600 V, and the Collector Emitter Saturation Voltage is 2.2 V, and Continuous Collector Current at 25 C is 70 A, and the Gate Emitter Leakage Current is 200 nA, and Maximum Gate Emitter Voltage is 20 V, and the Continuous Collector Current Ic Max is 70 A.
The NGTB35N65FL2WG is IGBT 650V 70A 300W TO247, that includes 650V Voltage Collector Emitter Breakdown Max, they are designed to operate with a 2V @ 15V, 35A Vce on Max Vge Ic, Unit Weight is shown on datasheet note for use in a 1.340411 oz, that offers Test Condition features such as 400V, 35A, 10 Ohm, 15V, Td on off 25°C is designed to work in 72ns/132ns, as well as the 840μJ (on), 280μJ (off) Switching Energy, the device can also be used as TO-247 Supplier Device Package. In addition, the Reverse Recovery Time trr is 68ns, the device is offered in 300W Power Max, the device has a 300 W of Pd Power Dissipation, and Packaging is Tube, and the Package Case is TO-247-3, and Mounting Style is Through Hole, and the Mounting Type is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and Maximum Gate Emitter Voltage is 20 V, and the Input Type is Standard, and IGBT Type is Trench Field Stop, and the Gate Emitter Leakage Current is 200 nA, and Gate Charge is 125nC, and the Current Collector Pulsed Icm is 120A, and Current Collector Ic Max is 70A, and the Continuous Collector Current Ic Max is 70 A, and Continuous Collector Current at 25 C is 70 A, and the Configuration is Single, and Collector Emitter Voltage VCEO Max is 650 V, and the Collector Emitter Saturation Voltage is 2.2 V.
NGTB40N120FL2WG with circuit diagram, that includes 2 V Collector Emitter Saturation Voltage, they are designed to operate with a 1200 V Collector Emitter Voltage VCEO Max, Configuration is shown on datasheet note for use in a Single, that offers Continuous Collector Current at 25 C features such as 80 A, Current Collector Ic Max is designed to work in 80A, as well as the 200A Current Collector Pulsed Icm, the device can also be used as 313nC Gate Charge. In addition, the Gate Emitter Leakage Current is 200 nA, the device is offered in Trench Field Stop IGBT Type, the device has a Standard of Input Type, and Maximum Gate Emitter Voltage is 30 V, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Mounting Type is Through Hole, and Mounting Style is Through Hole, and the Package Case is TO-247-3, and Packaging is Tube, and the Pd Power Dissipation is 535 W, and Power Max is 535W, and the Reverse Recovery Time trr is 240ns, and Series is NGTB40N120FL2, and the Supplier Device Package is TO-247, and Switching Energy is 3.4mJ (on), 1.1mJ (off), and the Td on off 25°C is 116ns/286ns, and Test Condition is 600V, 40A, 10 Ohm, 15V, and the Unit Weight is 0.229281 oz, and Vce on Max Vge Ic is 2.4V @ 15V, 40A, and the Voltage Collector Emitter Breakdown Max is 1200V.
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制造商零件编号 | 价格(¥) | 现有数量 | |
---|---|---|---|
NGTB20N120LWGIGBT 1200V 40A 192W TO247-3 | 8.49 |
2040
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NGD8201NT4GIGBT 440V 20A 125W DPAK | 12.00 |
4500
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NGD8205ANT4GINSULATED GATE BIPOLAR TRANSISTO | 3.39 |
104129
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NGTB20N120IHLWGIGBT 1200V 40A 192W TO247-3 | 4.60 |
10
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NGP15N41CLGIGBT 440V 15A 107W TO220AB | 3.00 |
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NGTB30N120IHSWGIGBT 1200V 30A TO247 | 14.07 |
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类型 | 描述 | 全选 |
---|---|---|
不同 Vge、Ic 时 Vce(on)(最大值) | 2.2V @ 15V,40A | |
供应商器件封装 | TO-247-3 | |
电流 - 集电极脉冲 (Icm) | 160 A | |
封装/外壳 | TO-247-3 | |
安装类型 | 通孔 | |
电压 - 集射极击穿(最大值) | 1200 V | |
工作温度 | -55°C ~ 150°C(TJ) | |
IGBT 类型 | 沟槽型场截止 | |
反向恢复时间 (trr) | 200 ns | |
产品状态 | 停产 | |
测试条件 | 600V,40A,10 欧姆,15V | |
包装 | 管件 | |
25°C 时 Td(开/关)值 | 130ns/385ns | |
栅极电荷 | 415 nC | |
输入类型 | 标准 | |
开关能量 | 2.6mJ(开),1.6mJ(关) | |
功率 - 最大值 | 260 W | |
电流 - 集电极 (Ic)(最大值) | 80 A |
onsemi
onsemi 正在推动节能创新,帮助客户减少全球能源使用。 该公司提供全面的节能电源和信号管理、逻辑、分立和定制解决方案组合,帮助设计工程师解决他们在汽车、通信、计算、消费、工业、LED 照明、医疗、军事/航空航天和电源领域的独特设计挑战 供应应用。 onsemi 在北美、欧洲和亚太地区的主要市场运营响应迅速、可靠、世界一流的供应链和质量计划,以及制造设施、销售办事处和设计中心网络。
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