JANS1N6642UBD datasheet
JANS1N6642UBD pdf
JANS1N6642UBD distributor
JANS1N6642UBD manufacturer
JANS1N6642UBD supplier
JANS1N6642UBD price
JANS1N6642UBD specification
JANS1N6642UBD wholesale
JANS1N6642UBD package
JANS1N6642UBD Microsemi Corporation
Microsemi Corporation
Microsemi (Microchip Technology) - Microsemi Corporation 于 2018 年 5 月被 Microchip 收购。Microsemi 为航空航天与国防、通信、数据中心和工业市场提供全面的半导体和系统解决方案组合。 产品包括高性能和抗辐射模拟混合信号 IC、FPGA、SoC、ASIC、电源管理产品、计时、语音处理设备、分立元件、企业存储和以太网供电解决方案。
查看所有产品从 Microsemi CorporationHey there! If you're on the hunt for some Microsemi Corporation parts like the JANS1N6642UBD, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the JANS1N6642UBD, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
Just so you know, we diligently maintain the production status and pricing on SZC, updating them daily to keep you informed. However, please understand that sometimes these might not be bang up to date due to rapid changes. If you haven't found what you're seeking, you can acquire valuable information via email. This includes details on the JANS1N6642UBD inventory quantity, preferential pricing, lead time, MOQ, datasheets and the manufacturer. We're always eager to assist you, so don't hesitate to reach out. Feel free to contact us anytime at www.szcomponents.com.
The JANS1N6638 is DIODE GEN PURP 125V 300MA DO204, that includes Military, MIL-PRF-19500/578 Series, they are designed to operate with a Bulk Packaging, Package Case is shown on datasheet note for use in a DO-204AH, DO-35, Axial, that offers Mounting Type features such as Through Hole, Speed is designed to work in Fast Recovery = 200mA (Io), as well as the Standard Diode Type, the device can also be used as 500nA @ 125V Current Reverse Leakage Vr. In addition, the Voltage Forward Vf Max If is 1.1V @ 200mA, the device is offered in 125V Voltage DC Reverse Vr Max, the device has a 300mA of Current Average Rectified Io, and Reverse Recovery Time trr is 4.5ns, and the Capacitance Vr F is 2.5pF @ 0V, 1MHz, it has an Operating Temperature Junction range of -65°C ~ 175°C.
The JANS1N6642 is DIODE GEN PURP 75V 300MA DO204AH, that includes 1.2V @ 100mA Voltage Forward Vf Max If, they are designed to operate with a 75V Voltage DC Reverse Vr Max, Speed is shown on datasheet note for use in a Fast Recovery = 200mA (Io), that offers Series features such as Military, MIL-PRF-19500/578, Reverse Recovery Time trr is designed to work in 5ns, as well as the Bulk Packaging, the device can also be used as DO-204AH, DO-35, Axial Package Case, it has an Operating Temperature Junction range of -65°C ~ 175°C, the device is offered in Through Hole Mounting Type, the device has a Standard of Diode Type, and Current Reverse Leakage Vr is 500nA @ 75V, and the Current Average Rectified Io is 300mA, and Capacitance Vr F is 5pF @ 0V, 1MHz.
JANS1N6640 with circuit diagram, that includes 300mA Current Average Rectified Io, they are designed to operate with a 100nA @ 50V Current Reverse Leakage Vr, Diode Type is shown on datasheet note for use in a Standard, that offers Mounting Type features such as Through Hole, it has an Operating Temperature Junction range of -65°C ~ 175°C, as well as the DO-204AH, DO-35, Axial Package Case, the device can also be used as Bulk Packaging. In addition, the Reverse Recovery Time trr is 4ns, the device is offered in Military, MIL-PRF-19500/609 Series, the device has a Fast Recovery = 200mA (Io) of Speed, and Voltage DC Reverse Vr Max is 50V, and the Voltage Forward Vf Max If is 1V @ 200mA.
JANS1N6636US with EDA / CAD Models, that includes Through Hole Mounting Type, they are designed to operate with a Military, MIL-PRF-19500/356 Series, Package Case is shown on datasheet note for use in a E, Axial, that offers Supplier Device Package features such as E, Axial, Packaging is designed to work in Bulk, it has an Operating Temperature range of -65°C ~ 175°C, the device can also be used as 5W Power Max. In addition, the Voltage Zener Nom Vz is 4.7V, the device is offered in 20μA @ 1V Current Reverse Leakage Vr, the device has a 2 Ohm of Impedance Max Zzt, and Voltage Forward Vf Max If is 1.5V @ 1A, and the Tolerance is ±5%.
SZC的物流和库存管理程序为您带来无与伦比的成功。
我们位于福田、龙岗、南山的战略中心为特定客户的需求提供各种定制方案。
我们还与主要物流承运商建立了长期合作关系,并提供灵活的解决方案,以满足您的个性化需求。
1. 您从我们这里购买的每个电子组件都带有365天保修期。我们对我们产品的质量负责。
2. 如果您收到的任何物品不处于完美状态,我们承诺负责任地安排退款或更换。请注意,物品必须处于原始状态,这些选项才可用。
A: 我们的专业商务发展部门对原始制造商和的代理进行严格的测试和资格验证。所有供应商必须通过我们的资格审查后,才允许在我们的平台上列出他们的JANS1N6642UBD设备。我们将JANS1N6642UBD产品的采购渠道和质量置于一切之上,确保彻底的供应商审计,以便您可以充满信心地进行购买。
A: 使用芯能王电子有限公司的智能搜索引擎,按单二极管类别过滤,或者浏览的品牌页面以获取全面信息。
A: 由于的库存出现重大波动,实时更新具有挑战性。然而,我们确保在24小时内进行定期更新。我们建议在进行付款之前,与芯能王电子有限公司的销售代表或通过我们的在线客服确认您的JANS1N6642UBD订单。
A: 我们接受多种支付方式,包括TT银行、PayPal、信用卡、西联汇款和托管。
A: 客户可以从行业领先的货运公司中选择,如DHL、FedEx、UPS、TNT和挂号邮件。一旦您的订单准备好发货,我们的销售团队将通知您发货详情并提供跟踪号码。请注意,跟踪信息可能需要多达24小时才能显示。通常,快递交付需要3-5天,而挂号邮件需要25-60天。
A: 我们对您订单中随机选取的批次进行发货前检查(PSI),以确保发货前的质量。如果JANS1N6642UBD未能达到您的期望,在以下条件下,我们将接受退货或更换:
A: 对于任何售后服务,包括JANS1N6642UBD的数据表和引脚图,随时通过[email protected]与我们联系
A: 通过点击我们网站右下角的客户服务按钮,直接提交RFQ,或使用我们页面顶部的“联系我们”链接通过电子邮件或电话与我们联系。我们保证在24小时内回复您的询问。
制造商零件编号 | 价格(¥) | 现有数量 | |
---|---|---|---|
JANS1N3595USDIODE GEN PURP 200MA B SQ-MELF | 672.06 |
370
市场 | |
JANS1N5822USDIODE SCHOTTKY 40V 3A B SQ-MELF | 1100.00 |
257
市场 | |
JANS1N6640USDIODE GEN PURP 50V 300MA D-5D | 253.94 |
2758
市场 | |
JANS1N5806DIODE GEN PURP 150V 1A AXIAL | 260.00 |
250
市场 |
类型 | 描述 | 全选 |
---|---|---|
封装/外壳 | 4-SMD,无引线 | |
安装类型 | 表面贴装型 | |
不同 Vr、F 时电容 | 5pF @ 0V,1MHz | |
反向恢复时间 (trr) | 5 ns | |
速度 | 快速恢复 =< 500ns,> 200mA(Io) | |
不同 If 时电压 - 正向 (Vf) | 1.2 V @ 100 mA | |
技术 | 标准 | |
供应商器件封装 | UB | |
包装 | 散装 | |
产品状态 | 在售 |
Microsemi Corporation
Microsemi (Microchip Technology) - Microsemi Corporation 于 2018 年 5 月被 Microchip 收购。Microsemi 为航空航天与国防、通信、数据中心和工业市场提供全面的半导体和系统解决方案组合。 产品包括高性能和抗辐射模拟混合信号 IC、FPGA、SoC、ASIC、电源管理产品、计时、语音处理设备、分立元件、企业存储和以太网供电解决方案。
查看所有产品从 Microsemi CorporationDIODE GEN PURP UB
DIODE GEN PURP UB
DIODE GEN PURP 50V 2A A SQ-MELF
DIODE GEN PURP 75V 200MA DO35
DIODE GEN PURP 400V 500MA DO35
DIODE GEN PURP 125V 300MA AXIAL
DIODE GEN PURP 125V 300MA D-5B
DIODE SCHOTTKY 100V 5A POWERMITE
DIODE GEN PURP 600V 1.2A D-5A
DIODE GEN PURP 200V 12A DO203AA