MT9VDDT6472HY-335J1
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MT9VDDT6472HY-335J1
MODULE DDR SDRAM 512MB 200SODIMM
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Obsolete
Quantity Available:
4412
SZC Quality Assurance
Micron Technology Inc.
Micron pioneers inventive solutions driving tech breakthroughs like AI, IoT, self-driving cars, and space exploration. Innovating data management revolutionizes global progress. Over 40 years, 40,000 patents contributed. A diverse team of 34,000 spans 18 nations, fostering inclusive brilliance.
View All Product from Micron Technology Inc.
MT9VDDT6472HY-335J1 Features
MT9VDDT6472HY-335J1 Features
Table 1:Key Timing ParametersSpeedGradeIndustryNomenclatureCL = 3CL = 2.5CL = 2Data Rate (MT/s)-40B-335-262-26A-265PC3200PC2700PC2100PC2100PC2100400––––333333266266266266266266266200tRCD(ns)1518152020tRP(ns)1518152020tRC(ns)5560606565Notes1Notes:1. The values of tRCD and tRP for -335 modules show 18ns to align with industry specifications;actual DDR SDRAM device specifications are 15ns.Table 2:AddressingParameterRefresh countRow addressDevice bank addressDevice configurationColumn addressModule rank address128MB4K8K (A0–A11)4 (BA0, BA1)256MB8K8K (A0–A12)4 (BA0, BA1)512MB8K8K (A0–A12)4 (BA0, BA1)128Mb (16 Meg x 8)256Mb (32 Meg x 8)512Mb (64 Meg x 8)1K (A0–A9)1 (S0#)1K (A0–A9)1 (S0#)2K (A0–A9, A11)1 (S0#)Table 3:Part Numbers and Timing Parameters – 128MB ModulesBase device: MT46V16M8,1 128Mb DDR SDRAMPart Number2MT9VDDT1672HG-335__MT9VDDT1672HY-335__MT9VDDT1672HY-262__MT9VDDT1672HG-26A__MT9VDDT1672HG-265__ModuleDensity128MB128MB128MB128MB128MBConfigurationModuleBandwidthMemory Clock/Data RateClock Cycles(CL-tRCD-tRP)16 Meg x 7216 Meg x 7216 Meg x 7216 Meg x 7216 Meg x 722.7 GB/s2.7 GB/s2.1 GB/s2.1 GB/s2.1 GB/s6.0ns/333 MT/s6.0ns/333 MT/s7.5ns/266 MT/s7.5ns/266 MT/s7.5ns/266 MT/s2.5-3-32.5-3-32-2-22-3-32.5-3-3Table 4:Part Numbers and Timing Parameters – 256MB ModulesBase device: MT46V32M8,1 256Mb DDR SDRAMPart Number2MT9VDDT3272HG-40B__MT9VDDT3272HY-40B__MT9VDDT3272HG-335__MT9VDDT3272HY-335__MT9VDDT3272HG-262__MT9VDDT3272HG-265__MT9VDDT3272HY-265__ModuleDensity256MB256MB256MB256MB256MB256MB256MBConfigurationModuleBandwidthMemory Clock/Data RateClock Cycles(CL-tRCD-tRP)32 Meg x 7232 Meg x 7232 Meg x 7232 Meg x 7232 Meg x 7232 Meg x 7232 Meg x 723.2 GB/s3.2 GB/s2.7 GB/s2.7 GB/s2.1 GB/s2.1 GB/s2.1 GB/s5.0ns/400 MT/s5.0ns/400 MT/s6.0ns/333 MT/s6.0ns/333 MT/s7.5ns/266 MT/s7.5ns/266 MT/s7.5ns/266 MT/s3-3-33-3-32.5-3-32.5-3-32-2-22.5-3-32.5-3-3PDF: 09005aef80804052/Source: 09005aef806e057bDD9C16_32_64x72H.fm - Rev. E 1/08 EN2Micron Technology, Inc., reserves the right to change products or specifications without notice.©2004 Micron Technology, Inc. All rights reserved
MT9VDDT6472HY-335J1 Features
Table 5:Part Numbers and Timing Parameters – 512MB ModulesBase device: MT46V64M8,1 512Mb DDR SDRAMPart Number2MT9VDDT6472HG-40B__MT9VDDT6472HY-40B__MT9VDDT6472HG-335__MT9VDDT6472HY-335__MT9VDDT6472HG-26A__MT9VDDT6472HG-265__ModuleDensity512MB512MB512MB512MB512MB512MBConfigurationModuleBandwidthMemory Clock/Data RateClock Cycles(CL-tRCD-tRP)64 Meg x 7264 Meg x 7264 Meg x 7264 Meg x 7264 Meg x 7264 Meg x 723.2 GB/s3.2 GB/s2.7 GB/s2.7 GB/s2.1 GB/s2.1 GB/s5.0ns/400 MT/s5.0ns/400 MT/s6.0ns/333 MT/s6.0ns/333 MT/s7.5ns/266 MT/s7.5ns/266 MT/s3-3-33-3-32.5-3-32.5-3-32-3-32.5-3-3Notes:1. Data sheets for the base devices can be found on Micron’s Web site.2. All part numbers end with a two-place code (not shown) that designates component andPCB revisions. Consult factory for current revision codes. Example: MT9VDDT6472HY-335F2.PDF: 09005aef80804052/Source: 09005aef806e057bDD9C16_32_64x72H.fm - Rev. E 1/08 EN3Micron Technology, Inc., reserves the right to change products or specifications without notice.©2004 Micron Technology, Inc. All rights reserved
Product Attributes
| TYPE | DESCRIPTION | Select all |
|---|---|---|
| Series | - | |
| Product Status | Obsolete | |
| Memory Type | DDR SDRAM | |
| Memory Size | 512MB | |
| Package | Tray | |
| Transfer Rate (Mb/s, MT/s, MHz) | 333 | |
| Package / Case | 200-SODIMM |
Obsolete
Quantity Available:
4412
SZC Quality Assurance
Micron Technology Inc.
Micron pioneers inventive solutions driving tech breakthroughs like AI, IoT, self-driving cars, and space exploration. Innovating data management revolutionizes global progress. Over 40 years, 40,000 patents contributed. A diverse team of 34,000 spans 18 nations, fostering inclusive brilliance.
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