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IPA050N10NM5SXKSA1 Infineon Technologies
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
View All Product from Infineon TechnologiesHey there! If you're on the hunt for some Infineon Technologies parts like the IPA050N10NM5SXKSA1, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the IPA050N10NM5SXKSA1, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The IPA086N10N3 G is MOSFET N-Ch 100V 45A TO220FP-3 OptiMOS 3, that includes OptiMOS 3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPA086N10N3GXK IPA086N10N3GXKSA1 SP000485984, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the OptiMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 37.5 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 8 ns, and the Rise Time is 10 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 45 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Rds On Drain Source Resistance is 8.6 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 27 ns, and Typical Turn On Delay Time is 16 ns, and the Qg Gate Charge is 14 nC, and Channel Mode is Enhancement.
The IPA086N10N 086N10 is MOSFET N-CH 100V 45A TO220-FP manufactured by FEELING. The IPA086N10N 086N10 is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 45A TO220-FP.
The IPA086N10N3G is MOSFET N-CH 100V 45A TO220-FP manufactured by INFINEON. The IPA086N10N3G is available in TO-220-3 Full Pack Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 45A TO220-FP.
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TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V | |
Vgs(th) (Max) @ Id | 3.8V @ 84µA | |
Rds On (Max) @ Id, Vgs | 5mOhm @ 33A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Package / Case | TO-220-3 Full Pack | |
Current - Continuous Drain (Id) @ 25°C | 66A (Tc) | |
Supplier Device Package | PG-TO220 Full Pack | |
Drain to Source Voltage (Vdss) | 100 V | |
Mounting Type | Through Hole | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 38W (Tc) | |
Vgs (Max) | ±20V | |
Series | OptiMOS™5 | |
Package | Tube | |
Product Status | Active |
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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