IPP90R1K0C3XK

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The IPP90R1K0C3 is MOSFET N-CH 900V 5.7A TO-220, that includes CoolMOS C3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPP90R1K0C3XK IPP90R1K0C3XKSA1 SP000683094, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the CoolMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 89 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 35 ns, and the Rise Time is 20 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 5.7 A, and Vds Drain Source Breakdown Voltage is 900 V, and the Rds On Drain Source Resistance is 1 Ohms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 400 ns, and Typical Turn On Delay Time is 70 ns, and the Channel Mode is Enhancement.

The IPP90N06S4-04 is MOSFET N-CH 60V 90A TO220-3, that includes 60 V Vds Drain Source Breakdown Voltage, they are designed to operate with a 0.211644 oz Unit Weight, Transistor Type is shown on datasheet note for use in a 1 N-Channel, that offers Transistor Polarity features such as N-Channel, Tradename is designed to work in OptiMOS, as well as the Si Technology, the device can also be used as OptiMOS-T2 Series. In addition, the Rds On Drain Source Resistance is 3.7 mOhms, the device is offered in IPP90N06S404AKSA1 IPP90N06S404AKSA2 IPP90N06S404XK SP001028750 Part Aliases, the device has a Tube of Packaging, and Package Case is TO-220-3, and the Number of Channels is 1 Channel, and Id Continuous Drain Current is 90 A.

The IPP90N04S4-02 is MOSFET N-CH 40V 90A TO220-3-1, that includes 90 A Id Continuous Drain Current, they are designed to operate with a 1 Channel Number of Channels, Package Case is shown on datasheet note for use in a TO-220-3, that offers Packaging features such as Tube, Part Aliases is designed to work in IPP90N04S402AKSA1 IPP90N04S402XK SP000646200, as well as the 2.1 mOhms Rds On Drain Source Resistance, the device can also be used as OptiMOS-T2 Series. In addition, the Technology is Si, the device is offered in OptiMOS Tradename, the device has a N-Channel of Transistor Polarity, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.211644 oz, and Vds Drain Source Breakdown Voltage is 40 V.

IPP80R450P7XKSA1 with EDA / CAD Models manufactured by Infineon. is part of the IC Chips, N-Channel 800V 11A (Tc) 73W (Tc) Through Hole PG-TO-220-3, Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220 Tube.