SPB11N60S5ATMA1

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The SPB11N60S5 is MOSFET N-CH 600V 11A TO-263, that includes CoolMOS S5 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a SP000012373 SPB11N60S5ATMA1 SPB11N60S5XT, that offers Unit Weight features such as 0.139332 oz, Mounting Style is designed to work in SMD/SMT, as well as the CoolMOS Tradename, the device can also be used as TO-252-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 125 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 20 ns, and the Rise Time is 35 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 11 A, and Vds Drain Source Breakdown Voltage is 600 V, and the Rds On Drain Source Resistance is 380 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 150 ns, and Typical Turn On Delay Time is 130 ns, and the Channel Mode is Enhancement.

The SPB11N60C3 is MOSFET N-CH 650V 11A D2PAK, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 600 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Typical Turn On Delay Time features such as 10 ns, Typical Turn Off Delay Time is designed to work in 44 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Tradename is CoolMOS, the device is offered in Si Technology, the device has a CoolMOS C3 of Series, and Rise Time is 5 ns, and the Rds On Drain Source Resistance is 380 mOhms, and Pd Power Dissipation is 125 W, and the Part Aliases is SP000013519 SPB11N60C3ATMA1 SPB11N60C3XT, and Packaging is Reel, and the Package Case is TO-252-3, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 11 A, and the Fall Time is 5 ns, and Configuration is Single, and the Channel Mode is Enhancement.

The SPB11N60C3ATMA1 is MOSFET N-CH 650V 11A D2PAK manufactured by INFINEO. The SPB11N60C3ATMA1 is available in TO263 Package, is part of the FETs - Single, , and with support for MOSFET N-CH 650V 11A D2PAK, N-Channel 650V 11A (Tc) 125W (Tc) Surface Mount PG-TO263-3-2, Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R.

SPB11N60C5 with EDA / CAD Models manufactured by INF. The SPB11N60C5 is available in TO-263 Package, is part of the IC Chips.