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AUIRFR1010Z International Rectifier
International Rectifier
Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.
View All Product from International RectifierHey there! If you're on the hunt for some International Rectifier parts like the AUIRFR1010Z, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the AUIRFR1010Z, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The AUIRFR024NTRR is MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms, that includes Reel Packaging, they are designed to operate with a 0.139332 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Quint Source Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 45 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 27 ns, and Rise Time is 34 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 17 A, and the Vds Drain Source Breakdown Voltage is 55 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 75 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 19 ns, and Typical Turn On Delay Time is 4.9 ns, and the Qg Gate Charge is 20 nC, and Forward Transconductance Min is 4.5 S, and the Channel Mode is Enhancement.
The AUIRFR024N is MOSFET AUTO 55V 1 N-CH HEXFET 75mOhms, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 55 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 4 g, that offers Transistor Type features such as 1 N-Channel, Transistor Polarity is designed to work in N-Channel, as well as the Si Technology, the device can also be used as 75 mOhms Rds On Drain Source Resistance. In addition, the Qg Gate Charge is 13.3 nC, the device is offered in 45 W Pd Power Dissipation, the device has a Tube of Packaging, and Package Case is TO-252-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, and the Id Continuous Drain Current is 17 A, and Configuration is Single.
AUIRFP4568-E with circuit diagram, that includes Tube Packaging, they are designed to operate with a Si Technology.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
AUIRFP4110MOSFET N-CH 100V 120A TO247AC | 9.40 |
1903
Marketplace | |
AUIRF7739L2TRMOSFET N-CH 40V 46A DIRECTFET | 8.30 |
2509
Marketplace | |
AUIRF9Z34NMOSFET P-CH 55V 19A TO220AB | 0.09 |
3171
Marketplace | |
AUIRFB3806MOSFET N-CH 60V 43A TO220AB | 0.65 |
3729
Marketplace | |
AUIRFP4004MOSFET N-CH 40V 195A TO247AC | 0.75 |
3387
Marketplace | |
AUIRFB3806AUTOMOTIVE N CHANNEL | Price negotiable |
2939
Marketplace | |
AUIRF7759L2TRMOSFET N-CH 75V 375A DIRECTFET | 304.26 |
4000
Marketplace | |
AUIRFP4110MOSFET N-CH 100V 120A TO247AC | 4.30 |
1903
Marketplace | |
AUIRF7739L2TRMOSFET N-CH 40V 46A/270A DIRECT | 4.42 |
1121
Marketplace | |
AUIRF9Z34NAUTOMOTIVE HEXFET P CHANNEL | 0.76 |
11686
Marketplace | |
AUIRFP4004MOSFET N-CH 40V 195A TO247AC | 3.28 |
303
Marketplace |
MOSFET N-CH 100V 120A TO247AC
MOSFET N-CH 40V 46A DIRECTFET
MOSFET P-CH 55V 19A TO220AB
MOSFET N-CH 60V 43A TO220AB
MOSFET N-CH 40V 195A TO247AC
AUTOMOTIVE N CHANNEL
MOSFET N-CH 75V 375A DIRECTFET
MOSFET N-CH 100V 120A TO247AC
MOSFET N-CH 40V 46A/270A DIRECT
AUTOMOTIVE HEXFET P CHANNEL
MOSFET N-CH 40V 195A TO247AC
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V | |
Vgs(th) (Max) @ Id | 4V @ 100µA | |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 42A, 10V | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) | |
Supplier Device Package | D-PAK (TO-252AA) | |
Drain to Source Voltage (Vdss) | 55 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 140W (Tc) | |
Series | HEXFET® | |
Package | Bulk | |
Product Status | Active |
International Rectifier
Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.
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