IRG4PH30KDPBF datasheet
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IRG4PH30KDPBF International Rectifier
International Rectifier
Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.
View All Product from International RectifierSZC's logistic and inventory management programs bring you unmatched success.
Our strategic hubs located in Futian, Longgang, Nanshan offer a variety of customized programs designed for specific customers' needs.
We also have long-standing relationships with major logistics carriers and provide flexible solutions to meet your individual requirements.
1. Every electronic component you purchase from us comes with a 365-Day Warranty. We stand behind the quality of our products.
2. Should you receive any item that isn't in perfect condition, we are committed to arranging a refund or replacement responsibly. Please note that items must be in their original condition for these options to be available.
A: Our professional business development department conducts rigorous testing and verification of the qualifications of original manufacturers and agents of . All suppliers must undergo and pass our qualification review before they are allowed to list their IRG4PH30KDPBF devices on our platform. We prioritize the sourcing channels and quality of IRG4PH30KDPBF products above everything else, ensuring thorough supplier audits so you can make your purchase with utmost confidence.
A: Utilize SZComponents's intelligent search engine, filter by the Single IGBTs category, or navigate through the 's brand page for comprehensive information.
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A: We conduct a Pre-Shipment Inspection (PSI) on randomly selected batches from your order to ensure quality before shipment. We will accept returns or replacements of the IRG4PH30KDPBF if it does not meet your expectations under the following conditions:
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
IRG4PF50WPBFIGBT 900V 51A 200W TO247AC | 4.15 |
275
Marketplace | |
IRG4PF50WPBFIGBT, 51A I(C), 900V V(BR)CES, N | Price negotiable |
275
Marketplace | |
IRG4PC60UPBFIRG4PC60 - DISCRETE IGBT WITHOUT | 10.79 |
130
Marketplace | |
IRG4PC60UPBFIGBT 600V 75A 520W TO247AC | Price negotiable |
8104
Marketplace | |
IRG4PC60UPBFIGBT, 75A I(C), 600V V(BR)CES, N | Price negotiable |
130
Marketplace |
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IRG4PC60 - DISCRETE IGBT WITHOUT
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TYPE | DESCRIPTION | Select all |
---|---|---|
Vce(on) (Max) @ Vge, Ic | 4.2V @ 15V, 10A | |
Supplier Device Package | TO-247AC | |
Current - Collector Pulsed (Icm) | 40 A | |
Package / Case | TO-247-3 | |
Mounting Type | Through Hole | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Reverse Recovery Time (trr) | 50 ns | |
Product Status | Active | |
Test Condition | 800V, 10A, 23Ohm, 15V | |
Package | Bulk | |
Td (on/off) @ 25°C | 39ns/220ns | |
Gate Charge | 53 nC | |
Input Type | Standard | |
Switching Energy | 950µJ (on), 1.15mJ (off) | |
Power - Max | 100 W | |
Current - Collector (Ic) (Max) | 20 A |
International Rectifier
Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.
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