IRF630B_FP001

IRF630B_FP001

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onsemi
IRF630B_FP001
MOSFET N-CH 200V 9A TO220-3
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Price negotiable

Price update:a months ago
Available in stock: 30
45
Serves customers in 45 countries
1000+
Worldwide Manufacturers
$140M
$140M Growth in 5 Years
50.0M+
50M Parts Shipped in 5 Years
onsemi

onsemi

Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.

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IRF630B_FP001 Products

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 9.0A, 200V, RDS(on)= 0.4Ω@VGS= 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features
• 9.0A, 200V, RDS(on)= 0.4Ω@VGS= 10 V
• Low gate charge ( typical 22 nC)
• Low Crss ( typical 22 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

Product Attributes

TYPE DESCRIPTION Select all
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V
Vgs(th) (Max) @ Id 4V @ 250µA
Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 200 V
Mounting Type Through Hole
Technology MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 150°C (TJ)
FET Type N-Channel
Power Dissipation (Max) 72W (Tc)
Vgs (Max) ±30V
Package Tube
Product Status Obsolete

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Price negotiable

Price update:a months ago
Available in stock: 30
onsemi

onsemi

Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.

View All Product from onsemi

Blog