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STI300N4F6 STMicroelectronics
STMicroelectronics
STMicroelectronics is a leading global semiconductor company known for pioneering cutting-edge solutions across microelectronics. With unmatched silicon expertise, potent manufacturing, rich IP, and strategic alliances, it's at the forefront of SoC technology, guiding convergence trends.
View All Product from STMicroelectronicsThis device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
STI260N6F6MOSFET N-CH 75V 120A I2PAK | 5.54 |
295
Marketplace | |
STH270N8F7-6MOSFET N-CH 80V 180A H2PAK | 6.91 |
10000
Marketplace |
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Rds On (Max) @ Id, Vgs | 2.2mOhm @ 80A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Current - Continuous Drain (Id) @ 25°C | 160A (Tc) | |
Supplier Device Package | I2PAK (TO-262) | |
Drain to Source Voltage (Vdss) | 40 V | |
Mounting Type | Through Hole | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 300W (Tc) | |
Vgs (Max) | ±20V | |
Series | DeepGATE™, STripFET™ VI | |
Package | Tube | |
Product Status | Obsolete |
STMicroelectronics
STMicroelectronics is a leading global semiconductor company known for pioneering cutting-edge solutions across microelectronics. With unmatched silicon expertise, potent manufacturing, rich IP, and strategic alliances, it's at the forefront of SoC technology, guiding convergence trends.
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