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FDI047AN08A0 Fairchild Semiconductor
Fairchild Semiconductor
The acquisition of Fairchild by onsemi has culminated. In synergy, an amplified product array emerges: power discretes, ICs, and modules, coupled with a comprehensive selection spanning low to high voltage realms, augmenting design alternatives. This union fortifies our footing in pivotal domains like automotive, industrial, and wireless, bolstered by elevated technical and sales reinforcement.
View All Product from Fairchild SemiconductorHey there! If you're on the hunt for some Fairchild Semiconductor parts like the FDI047AN08A0, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the FDI047AN08A0, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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FDI045N10A_F102 with pin details, that includes Tube Packaging, they are designed to operate with a 0.073511 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as I2PAK-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 263 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 15 ns, and Rise Time is 26 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 120 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 3.8 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 50 ns, and Typical Turn On Delay Time is 23 ns, and the Qg Gate Charge is 54 nC, and Forward Transconductance Min is 132 S, and the Channel Mode is Enhancement.
FDI038AN06AO with user guide manufactured by FAIRCHILD. The FDI038AN06AO is available in TO-262 Package, is part of the IC Chips.
The FDI045N10A is MOSFET N-CH 100V 120A I2PAK-3 manufactured by FAIRCHILD. The FDI045N10A is available in TO-262-3 Long Leads, I²Pak, TO-262AA Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 120A I2PAK-3, N-Channel 100V 120A (Tc) 263W (Tc) Through Hole I2PAK.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
FDH300TRDIODE GEN PURP 125V 200MA DO35 | 0.24 |
30000
Marketplace | |
FDH44N50MOSFET N-CH 500V 44A TO247-3 | 24.89 |
2000
Marketplace | |
FDH210N08MOSFET N-CH 75V TO247-3 | Price negotiable |
527
Marketplace | |
FDH3632MOSFET N-CH 100V 12A/80A TO247-3 | 0.48 |
4850
Marketplace | |
FDH300ADIODE GEN PURP 125V 200MA DO35 | 0.08 |
5802
Marketplace | |
FDH210N08MOSFET N-CH 75V TO247-3 | 6.22 |
527
Marketplace |
DIODE GEN PURP 125V 200MA DO35
MOSFET N-CH 500V 44A TO247-3
MOSFET N-CH 75V TO247-3
MOSFET N-CH 100V 12A/80A TO247-3
DIODE GEN PURP 125V 200MA DO35
MOSFET N-CH 75V TO247-3
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 138 nC @ 10 V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Supplier Device Package | I2PAK (TO-262) | |
Drain to Source Voltage (Vdss) | 75 V | |
Mounting Type | Through Hole | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 310W (Tc) | |
Vgs (Max) | ±20V | |
Series | PowerTrench® | |
Package | Tube | |
Product Status | Obsolete |
Fairchild Semiconductor
The acquisition of Fairchild by onsemi has culminated. In synergy, an amplified product array emerges: power discretes, ICs, and modules, coupled with a comprehensive selection spanning low to high voltage realms, augmenting design alternatives. This union fortifies our footing in pivotal domains like automotive, industrial, and wireless, bolstered by elevated technical and sales reinforcement.
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