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IHW30N120R5XKSA1 Infineon Technologies
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
View All Product from Infineon TechnologiesHey there! If you're on the hunt for some Infineon Technologies parts like the IHW30N120R5XKSA1, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the IHW30N120R5XKSA1, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The IHW30N120R2 is IGBT 1200V 60A 390W TO247-3, that includes TrenchStopR Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IHW30N120R2FKSA1 SP000212017, that offers Unit Weight features such as 1.340411 oz, Mounting Style is designed to work in Through Hole, as well as the TO-247-3 Package Case, the device can also be used as Standard Input Type. In addition, the Mounting Type is Through Hole, the device is offered in PG-TO247-3 Supplier Device Package, the device has a Single of Configuration, and Power Max is 390W, and the Current Collector Ic Max is 60A, and Voltage Collector Emitter Breakdown Max is 1200V, and the IGBT Type is NPT, Trench Field Stop, and Current Collector Pulsed Icm is 90A, and the Vce on Max Vge Ic is 1.8V @ 15V, 30A, and Switching Energy is 3.1mJ, and the Gate Charge is 198nC, and Td on off 25°C is -/792ns, and the Test Condition is 600V, 30A, 28 Ohm, 15V, and Pd Power Dissipation is 390 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 40 C, and the Collector Emitter Voltage VCEO Max is 1.2 kV, and Collector Emitter Saturation Voltage is 2 V, and the Continuous Collector Current at 25 C is 30 A, and Maximum Gate Emitter Voltage is +/- 20 V, and the Continuous Collector Current Ic Max is 30 A.
The IHW30N120R3 is IGBT 1200V 60A 349W TO247-3, that includes 1200V Voltage Collector Emitter Breakdown Max, they are designed to operate with a 1.75V @ 15V, 30A Vce on Max Vge Ic, Test Condition is shown on datasheet note for use in a 600V, 30A, 10 Ohm, 15V, that offers Td on off 25°C features such as -/326ns, Switching Energy is designed to work in 1.47mJ (off), as well as the TO-247-3 Supplier Device Package, the device can also be used as TrenchStopR Series. In addition, the Power Max is 349W, the device is offered in IHW30N120R3 SP000999768 Part Aliases, the device has a Tube of Packaging, and Package Case is TO-247-3, and the Mounting Type is Surface Mount, and Input Type is Standard, and the Gate Charge is 263nC, and Current Collector Pulsed Icm is 90A, and the Current Collector Ic Max is 60A.
IHW30N120R with circuit diagram manufactured by FEELING. The IHW30N120R is available in TO-3P Package, is part of the IGBTs - Single.
IHW30N120R2/H30R1202 with EDA / CAD Models manufactured by INFINEON. The IHW30N120R2/H30R1202 is available in TO-247 Package, is part of the IC Chips.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
IGO60R070D1AUMA1GANFET N-CH 600V 31A 20DSO | 16.72 |
9595
Marketplace | |
IGOT60R070D1AUMA1GANFET N-CH 600V 31A 20DSO | 20.75 |
3564
Marketplace | |
IGT60R190D1SATMA1GANFET N-CH 600V 12.5A 8HSOF | Price negotiable |
6295
Marketplace | |
IGT60R070D1ATMA1GANFET N-CH 600V 31A 8HSOF | 22.22 |
3011
Marketplace |
TYPE | DESCRIPTION | Select all |
---|---|---|
Vce(on) (Max) @ Vge, Ic | 1.85V @ 15V, 30A | |
Supplier Device Package | PG-TO247-3 | |
Current - Collector Pulsed (Icm) | 90 A | |
Package / Case | TO-247-3 | |
Mounting Type | Through Hole | |
Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
Operating Temperature | -40°C ~ 175°C (TJ) | |
IGBT Type | Trench Field Stop | |
Product Status | Active | |
Test Condition | 600V, 30A, 10Ohm, 15V | |
Package | Tube | |
Td (on/off) @ 25°C | -/330ns | |
Series | TrenchStop™ | |
Gate Charge | 235 nC | |
Input Type | Standard | |
Switching Energy | 1.1mJ (off) | |
Power - Max | 330 W | |
Current - Collector (Ic) (Max) | 60 A |
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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