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IRFH7194TRPBF Infineon Technologies
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
View All Product from Infineon TechnologiesHey there! If you're on the hunt for some Infineon Technologies parts like the IRFH7194TRPBF, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the IRFH7194TRPBF, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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IRFH7191TRPBF with pin details, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a PQFN-8, that offers Technology features such as Si, Number of Channels is designed to work in 1 Channel, as well as the Single Configuration, the device can also be used as 104 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a 3.6 ns of Fall Time, and Rise Time is 6.1 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 80 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Vgs th Gate Source Threshold Voltage is 3.6 V, and the Rds On Drain Source Resistance is 8 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 10.6 ns, and Typical Turn On Delay Time is 4.5 ns, and the Qg Gate Charge is 26 nC, and Forward Transconductance Min is 112 S, and the Channel Mode is Enhancement.
IRFH7188TRPBF with user guide, that includes 3.6 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 100 V, that offers Typical Turn On Delay Time features such as 4.9 ns, Typical Turn Off Delay Time is designed to work in 12 ns, as well as the N-Channel Transistor Polarity, the device can also be used as Si Technology. In addition, the Rise Time is 4.5 ns, the device is offered in 6 mOhms Rds On Drain Source Resistance, the device has a 33 nC of Qg Gate Charge, and Pd Power Dissipation is 132 W, and the Packaging is Reel, and Package Case is PQFN-8, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 105 A, and Forward Transconductance Min is 109 S, and the Fall Time is 3.4 ns, and Configuration is Single, and the Channel Mode is Enhancement.
IRFH7190TRPBF with circuit diagram manufactured by IR. The IRFH7190TRPBF is available in 8-PowerTDFN Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 15A, N-Channel 100V 15A (Ta), 82A (Tc) 3.6W (Ta), 104W (Tc) Surface Mount PQFN (5x6), MOSFET MOSFET, 100V, 82A, 7.5 mOhm, 26 nC Qg, PQFN 5x6.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
IRF60DM206IRF60 - 12V-300V N-CHANNEL POWER | 1.42 |
51208
Marketplace | |
IRF60DM206MOSFET N-CH 60V 130A DIRECTFET | 2.64 |
4385
Marketplace |
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 733 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
Vgs(th) (Max) @ Id | 3.6V @ 50µA | |
Rds On (Max) @ Id, Vgs | 16.4mOhm @ 21A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Package / Case | 8-PowerTDFN | |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 35A (Tc) | |
Supplier Device Package | 8-PQFN (5x6) | |
Drain to Source Voltage (Vdss) | 100 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 3.6W (Ta), 39W (Tc) | |
Vgs (Max) | ±20V | |
Series | FASTIRFET™, HEXFET® | |
Package | Tape & Reel (TR) | |
Product Status | Obsolete |
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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