HFA3096B

HFA3096B

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Intersil
HFA3096B
RF TRANS NPN/PNP 5D.5GHZ 16SOIC
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Price negotiable

Price update:a months ago
Available in stock: 64
45
Serves customers in 45 countries
1000+
Worldwide Manufacturers
$140M
$140M Growth in 5 Years
50.0M+
50M Parts Shipped in 5 Years
Intersil

Intersil

Commencing January 1, 2018, Renesas and Intersil will unify, augmenting semiconductor potentials. This fusion melds Renesas' lauded MCU and SoC proficiencies with Intersil's power management and precision analog mastery. Resultant growth spans automotive, industrial, and broader domains, facilitating agile response to patrons' needs. The amalgamation, initiated in February 2017, blossomed in July under "One Global Renesas," catalyzing a synergistic effect. Join Renesas in fortifying its semiconductor market eminence.

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HFA3096B Products

The HFA3046, HFA3096, HFA3127 and the HFA3128 are ultra high frequency transistor arrays that are fabricated from the Renesas complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096B is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.

Application note AN9315 illustrates the use of these devices as RF amplifiers.

Feature

  • NPN transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz
  • NPN current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . 130
  • NPN early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . 50V
  • PNP transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 5.5GHz
  • PNP current gain (hFE) . . . . . . . . . . . . . . . . . . . . . . . . . 60
  • PNP early voltage (VA). . . . . . . . . . . . . . . . . . . . . . . . .20V
  • Noise figure (50Ω) at 1.0GHz. . . . . . . . . . . . . . . . . . 3.5dB
  • Collector to collector leakage . . . . . . . . . . . . . . . . . . .<1pA
  • Complete isolation between transistors
  • Pin compatible with industry standard 3XXX series arrays
  • Pb-free (RoHS compliant)

Product Attributes

TYPE DESCRIPTION Select all
Product Status Obsolete
Transistor Type 3 NPN + 2 PNP
Voltage - Collector Emitter Breakdown (Max) 12V, 15V
Frequency - Transition 8GHz, 5.5GHz
Noise Figure (dB Typ @ f) 3.5dB @ 1GHz
Power - Max 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 2V / 20 @ 10mA, 2V
Current - Collector (Ic) (Max) 65mA
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package 16-SOIC

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Price negotiable

Price update:a months ago
Available in stock: 64
Intersil

Intersil

Commencing January 1, 2018, Renesas and Intersil will unify, augmenting semiconductor potentials. This fusion melds Renesas' lauded MCU and SoC proficiencies with Intersil's power management and precision analog mastery. Resultant growth spans automotive, industrial, and broader domains, facilitating agile response to patrons' needs. The amalgamation, initiated in February 2017, blossomed in July under "One Global Renesas," catalyzing a synergistic effect. Join Renesas in fortifying its semiconductor market eminence.

View All Product from Intersil

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