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IPS0551T International Rectifier
International Rectifier
Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.
View All Product from International RectifierHey there! If you're on the hunt for some International Rectifier parts like the IPS0551T, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the IPS0551T, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The IPS050N03L G is MOSFET N-Ch 30V 50A IPAK-3 OptiMOS 3, that includes OptiMOS 3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPS050N03LGAKMA1 IPS050N03LGXK SP000810848, that offers Unit Weight features such as 0.139332 oz, Mounting Style is designed to work in Through Hole, as well as the OptiMOS Tradename, the device can also be used as IPAK-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 68 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 3.8 ns, and the Rise Time is 13 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 50 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Rds On Drain Source Resistance is 5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 25 ns, and Typical Turn On Delay Time is 6.7 ns, and the Channel Mode is Enhancement.
The IPS050N03LG is MOSFET N-CH 30V 50A TO251-3 manufactured by INFINEON. The IPS050N03LG is available in TO-251-3 Short Leads, IPak, TO-251AA Package, is part of the FETs - Single, , and with support for MOSFET N-CH 30V 50A TO251-3.
IPS051S with circuit diagram manufactured by IR. The IPS051S is available in TO-262 Package, is part of the IC Chips.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
IPS031RIC PWR SWITCH N-CHAN 1:1 TO252 | 0.28 |
3671
Marketplace | |
IPS031GIC PWR SWITCH N-CHANNEL 1:1 8SO | 0.41 |
3386
Marketplace | |
IPS031IC PWR SWITCH N-CHAN 1:1 TO220AB | 0.34 |
4566
Marketplace |
TYPE | DESCRIPTION | Select all |
---|---|---|
Package | Tube | |
Product Status | Obsolete | |
Switch Type | General Purpose | |
Number of Outputs | 1 | |
Ratio - Input:Output | 1:1 | |
Output Configuration | Low Side | |
Output Type | N-Channel | |
Interface | On/Off | |
Voltage - Load | 18V (Max) | |
Voltage - Supply (Vcc/Vdd) | Not Required | |
Current - Output (Max) | 35A | |
Rds On (Typ) | 4.5mOhm | |
Input Type | Non-Inverting | |
Fault Protection | Current Limiting (Fixed), Over Temperature | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | SUPER-220™ (TO-273AA) | |
Package / Case | TO-273AA |
International Rectifier
Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.
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