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FDB2570 onsemi
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
View All Product from onsemiHey there! If you're on the hunt for some onsemi parts like the FDB2570, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the FDB2570, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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FDB2552_F085 with pin details, that includes Reel Packaging, they are designed to operate with a 0.046296 oz Unit Weight, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as TO-252-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 150 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 29 ns, and Rise Time is 29 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 37 A, and the Vds Drain Source Breakdown Voltage is 150 V, and Vgs th Gate Source Threshold Voltage is 4 V, and the Rds On Drain Source Resistance is 97 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 36 ns, and Typical Turn On Delay Time is 12 ns, and the Qg Gate Charge is 39 nC, and Channel Mode is Enhancement.
The FDB2552 is MOSFET N-CH 150V 37A TO-263AB, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 150 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.046296 oz, that offers Typical Turn On Delay Time features such as 12 ns, Typical Turn Off Delay Time is designed to work in 36 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in PowerTrench Series, the device has a 29 ns of Rise Time, and Rds On Drain Source Resistance is 32 mOhms, and the Pd Power Dissipation is 150 W, and Part Aliases is FDB2552_NL, and the Packaging is Reel, and Package Case is TO-252-3, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Id Continuous Drain Current is 37 A, and Fall Time is 29 ns, and the Configuration is Single, and Channel Mode is Enhancement.
FDB2532_F085 with circuit diagram, that includes 17 ns Fall Time, they are designed to operate with a 79 A Id Continuous Drain Current, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Number of Channels features such as 1 Channel, Package Case is designed to work in TO-252-3, as well as the Reel Packaging, the device can also be used as 310 W Pd Power Dissipation. In addition, the Qg Gate Charge is 82 nC, the device is offered in 14 mOhms Rds On Drain Source Resistance, the device has a 30 ns of Rise Time, and Technology is Si, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.046296 oz, and Vds Drain Source Breakdown Voltage is 150 V, and the Vgs Gate Source Voltage is 20 V, and Vgs th Gate Source Threshold Voltage is 4 V.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
FDB2532MOSFET N-CH 150V 8A/79A D2PAK | 4.16 |
22684
Marketplace | |
FDB075N15A-F085MOSFET N-CH 150V 110A D2PAK | 2.07 |
70
Marketplace | |
FDB20N50FMOSFET N-CH 500V 20A D2PAK | 5.79 |
386
Marketplace | |
FDB2532POWER FIELD-EFFECT TRANSISTOR, 8 | 2.07 |
22684
Marketplace | |
FDB20AN06A0MOSFET N-CH 60V 9A/45A TO263AB | Price negotiable |
2455
Marketplace | |
FDB075N15AMOSFET N-CH 150V 130A D2PAK | 2.93 |
23740
Marketplace | |
FDB20AN06A0MOSFET N-CH 60V 9A/45A TO263AB | 0.12 |
5810
Marketplace |
MOSFET N-CH 150V 8A/79A D2PAK
MOSFET N-CH 150V 110A D2PAK
MOSFET N-CH 500V 20A D2PAK
POWER FIELD-EFFECT TRANSISTOR, 8
MOSFET N-CH 60V 9A/45A TO263AB
MOSFET N-CH 150V 130A D2PAK
MOSFET N-CH 60V 9A/45A TO263AB
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 1911 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Rds On (Max) @ Id, Vgs | 80mOhm @ 11A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Current - Continuous Drain (Id) @ 25°C | 22A (Ta) | |
Supplier Device Package | D²PAK (TO-263) | |
Drain to Source Voltage (Vdss) | 150 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -65°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 93W (Tc) | |
Vgs (Max) | ±20V | |
Series | PowerTrench® | |
Package | Tape & Reel (TR) | |
Product Status | Obsolete |
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
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