HUF76633S3S datasheet
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HUF76633S3S onsemi
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
View All Product from onsemiHey there! If you're on the hunt for some onsemi parts like the HUF76633S3S, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the HUF76633S3S, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
Just so you know, we diligently maintain the production status and pricing on SZC, updating them daily to keep you informed. However, please understand that sometimes these might not be bang up to date due to rapid changes. If you haven't found what you're seeking, you can acquire valuable information via email. This includes details on the HUF76633S3S inventory quantity, preferential pricing, lead time, MOQ, datasheets and the manufacturer. We're always eager to assist you, so don't hesitate to reach out. Feel free to contact us anytime at www.szcomponents.com.
HUF76633P3_F085 with pin details, that includes Tube Packaging, they are designed to operate with a 0.063493 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-220-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 145 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 58 ns, and Rise Time is 110 ns, and the Id Continuous Drain Current is 38 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 35 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 43 ns, and the Typical Turn On Delay Time is 12 ns, and Qg Gate Charge is 67 nC.
HUF76633S with user guide manufactured by FAIRCHILD. The HUF76633S is available in TO-263 Package, is part of the FETs - Single.
HUF76633S3 with circuit diagram manufactured by FSC. The HUF76633S3 is available in to263 Package, is part of the FETs - Single.
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A: Our professional business development department conducts rigorous testing and verification of the qualifications of original manufacturers and agents of . All suppliers must undergo and pass our qualification review before they are allowed to list their HUF76633S3S devices on our platform. We prioritize the sourcing channels and quality of HUF76633S3S products above everything else, ensuring thorough supplier audits so you can make your purchase with utmost confidence.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
HUF76419D3MOSFET N-CH 60V 20A IPAK | 0.24 |
3286
Marketplace | |
HUF75852G3MOSFET N-CH 150V 75A TO247-3 | 2.55 |
4910
Marketplace | |
HUF75852G3MOSFET N-CH 150V 75A TO247-3 | 11.95 |
4910
Marketplace | |
HUF76633P3MOSFET N-CH 100V 39A TO220-3 | 0.21 |
2949
Marketplace | |
HUF76423P3MOSFET N-CH 60V 35A TO220-3 | 1.50 |
10
Marketplace | |
HUF76407D3STMOSFET N-CH 60V 12A DPAK | 1.07 |
4441
Marketplace | |
HUF76419D3MOSFET N-CH 60V 20A IPAK | Price negotiable |
2123
Marketplace | |
HUF76407D3STN-CHANNEL LOGIC LEVEL ULTRAFET P | 0.10 |
4441
Marketplace | |
HUF76423P3POWER FIELD-EFFECT TRANSISTOR, 3 | 0.12 |
10
Marketplace |
MOSFET N-CH 60V 20A IPAK
MOSFET N-CH 150V 75A TO247-3
MOSFET N-CH 150V 75A TO247-3
MOSFET N-CH 100V 39A TO220-3
MOSFET N-CH 60V 35A TO220-3
MOSFET N-CH 60V 12A DPAK
MOSFET N-CH 60V 20A IPAK
N-CHANNEL LOGIC LEVEL ULTRAFET P
POWER FIELD-EFFECT TRANSISTOR, 3
TYPE | DESCRIPTION | Select all |
---|---|---|
Series | UltraFET™ | |
Package | Tube | |
Product Status | Obsolete | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100 V | |
Current - Continuous Drain (Id) @ 25°C | 39A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 35mOhm @ 39A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V | |
Vgs (Max) | ±16V | |
Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 25 V | |
Power Dissipation (Max) | 145W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | D²PAK (TO-263) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
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