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NTTFS4945NTWG onsemi
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
View All Product from onsemiHey there! If you're on the hunt for some onsemi parts like the NTTFS4945NTWG, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the NTTFS4945NTWG, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The NTTFS4939NTAG is MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL, that includes NTTFS4939N Series, they are designed to operate with a Reel Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as WDFN-8, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as Single Configuration. In addition, the Transistor Type is 1 N-Channel, the device is offered in 2.21 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 3.9 ns, and Rise Time is 20.6 ns, and the Id Continuous Drain Current is 14.3 A, and Vds Drain Source Breakdown Voltage is 30 V, and the Vgs th Gate Source Threshold Voltage is 1.2 V, and Rds On Drain Source Resistance is 5.5 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 20.8 ns, and the Typical Turn On Delay Time is 12.2 ns, and Qg Gate Charge is 28 nC, and the Forward Transconductance Min is 35 S.
The NTTFS4937NTAG is MOSFET N-CH 30V 11A 8WDFN, that includes 30 V Vds Drain Source Breakdown Voltage, they are designed to operate with a 0.000335 oz Unit Weight, Transistor Type is shown on datasheet note for use in a 1 N-Channel, that offers Transistor Polarity features such as N-Channel, Technology is designed to work in Si, as well as the NTTFS4937N Series, the device can also be used as 4.5 mOhms Rds On Drain Source Resistance. In addition, the Packaging is Reel, the device is offered in UDFN-8 Package Case, the device has a 1 Channel of Number of Channels, and Mounting Style is SMD/SMT, and the Id Continuous Drain Current is 82 A, and Configuration is Single.
The NTTFS4939NTWG is MOSFET 30V 56A 5.5 mOhm Single N-Chan u8FL, that includes Single Configuration, they are designed to operate with a 69 A Id Continuous Drain Current, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Number of Channels features such as 1 Channel, Package Case is designed to work in UDFN-8, as well as the Reel Packaging, the device can also be used as 5.5 mOhms Rds On Drain Source Resistance. In addition, the Series is NTTFS4939N, the device is offered in Si Technology, the device has a N-Channel of Transistor Polarity, and Transistor Type is 1 N-Channel, and the Unit Weight is 0.000335 oz, and Vds Drain Source Breakdown Voltage is 30 V.
The NTTFS4941NTWG is MOSFET 30V 46A 6.2 mOhm Single N-Chan u8FL, that includes UDFN-8 Package Case, they are designed to operate with a SMD/SMT Mounting Style, Configuration is shown on datasheet note for use in a Single, that offers Technology features such as Si, Packaging is designed to work in Reel, as well as the NTTFS4941N Series, the device can also be used as N-Channel Transistor Polarity. In addition, the Rds On Drain Source Resistance is 6.2 mOhms, the device is offered in 59 A Id Continuous Drain Current, the device has a 30 V of Vds Drain Source Breakdown Voltage, and Transistor Type is 1 N-Channel, and the Number of Channels is 1 Channel, and Unit Weight is 0.000335 oz.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
NTSB30100CTGDIODE ARR SCHOTT 100V 15A D2PAK | 0.21 |
5899
Marketplace | |
NTST30100CTGDIODE ARR SCHOTT 100V 15A TO220 | 0.41 |
4939
Marketplace | |
NTSB30100CTT4GDIODE ARR SCHOTT 100V 15A D2PAK | 1.53 |
7297
Marketplace | |
NTST30100SGDIODE SCHOTTKY 100V 30A TO220 | Price negotiable |
7915
Marketplace | |
NTST30100SGRECTIFIER DIODE, SCHOTTKY, 30A, | 0.83 |
173337
Marketplace | |
NTTFS4800NTAGMOSFET N-CH 30V 5A/32A 8WDFN | 0.51 |
100
Marketplace |
DIODE ARR SCHOTT 100V 15A D2PAK
DIODE ARR SCHOTT 100V 15A TO220
DIODE ARR SCHOTT 100V 15A D2PAK
DIODE SCHOTTKY 100V 30A TO220
RECTIFIER DIODE, SCHOTTKY, 30A,
MOSFET N-CH 30V 5A/32A 8WDFN
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 1194 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 17.3 nC @ 10 V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 20A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Package / Case | 8-PowerWDFN | |
Current - Continuous Drain (Id) @ 25°C | 7.1A (Ta), 34A (Tc) | |
Supplier Device Package | 8-WDFN (3.3x3.3) | |
Drain to Source Voltage (Vdss) | 30 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 890mW (Ta), 20W (Tc) | |
Vgs (Max) | ±20V | |
Package | Tape & Reel (TR) | |
Product Status | Obsolete |
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
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