PD85035TR-E

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The PD85035S-E is RF MOSFET Transistors POWER R.F. N-Ch Trans, that includes PD85035-E Series, they are designed to operate with a RF Power MOSFET Type, Packaging is shown on datasheet note for use in a Tube, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PowerSO-10RF (Straight Lead), as well as the Si Technology, the device can also be used as 14.9 dB at 870 MHz Gain. In addition, the Output Power is 35 W, the device is offered in 95 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and the Operating Frequency is 1 GHz, and Vgs Gate Source Voltage is 15 V, and the Id Continuous Drain Current is 8 A, and Vds Drain Source Breakdown Voltage is 40 V, and the Transistor Polarity is N-Channel.

The PD85035STR-E is RF MOSFET Transistors POWER R.F. N-Ch Trans, that includes 15 V Vgs Gate Source Voltage, they are designed to operate with a 40 V Vds Drain Source Breakdown Voltage, Type is shown on datasheet note for use in a RF Power MOSFET, that offers Transistor Polarity features such as N-Channel, Technology is designed to work in Si, as well as the PD85035-E Series, the device can also be used as 95 W Pd Power Dissipation. In addition, the Packaging is Reel, the device is offered in PowerSO-10RF (Straight Lead) Package Case, the device has a 35 W of Output Power, and Operating Frequency is 1 GHz, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 65 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 8 A, and the Gain is 14.9 dB at 870 MHz.

The PD85035STR1-E is RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic, that includes 14.9 dB at 870 MHz Gain, they are designed to operate with a 8 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, that offers Mounting Style features such as SMD/SMT, Operating Frequency is designed to work in 1 GHz, as well as the 35 W Output Power, the device can also be used as PowerSO-10RF (Straight Lead) Package Case. In addition, the Packaging is Reel, the device is offered in 95 W Pd Power Dissipation, the device has a PD85035-E of Series, and Technology is Si, and the Transistor Polarity is N-Channel, and Type is RF Power MOSFET, and the Vds Drain Source Breakdown Voltage is 40 V, and Vgs Gate Source Voltage is 15 V.

The PD85035-E is TRANS RF POWER LDMOST N-CH manufactured by ST. The PD85035-E is available in PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) Package, is part of the RF FETs, , and with support for TRANS RF POWER LDMOST N-CH, RF Mosfet LDMOS 13.6V 350mA 870MHz 17dB 15W PowerSO-10RF (Formed Lead), Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) Tube.