STD815CP40

Hey there! If you're on the hunt for some STMicroelectronics parts like the STD815CP40, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the STD815CP40, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.

Just so you know, we diligently maintain the production status and pricing on SZC, updating them daily to keep you informed. However, please understand that sometimes these might not be bang up to date due to rapid changes. If you haven't found what you're seeking, you can acquire valuable information via email. This includes details on the STD815CP40 inventory quantity, preferential pricing, lead time, MOQ, datasheets and the manufacturer. We're always eager to assist you, so don't hesitate to reach out. Feel free to contact us anytime at www.szcomponents.com.

The STD80N6F6 is MOSFET N-CH 60V DPAK, that includes DeepGATE?, STripFET? VI Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Unit Weight is shown on datasheet note for use in a 0.139332 oz, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in TO-252-3, DPak (2 Leads + Tab), SC-63, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 175°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a DPAK of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 120W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 60V, and the Input Capacitance Ciss Vds is 7480pF @ 25V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 80A (Tc), and Rds On Max Id Vgs is 6.5 mOhm @ 40A, 10V, and the Vgs th Max Id is 4.5V @ 250μA, and Gate Charge Qg Vgs is 122nC @ 10V, and the Pd Power Dissipation is 120 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 80 A, and Vds Drain Source Breakdown Voltage is 60 V, and the Vgs th Gate Source Threshold Voltage is 4.5 V, and Rds On Drain Source Resistance is 6.5 mOhms, and the Transistor Polarity is N-Channel, and Qg Gate Charge is 122 nC.

STD80N10F7 with user guide, that includes 4.5 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 100 V, that offers Unit Weight features such as 0.139332 oz, Typical Turn On Delay Time is designed to work in 19 ns, as well as the 36 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a N-channel STripFET of Series, and Rise Time is 32 ns, and the Rds On Drain Source Resistance is 10 mOhms, and Qg Gate Charge is 45 nC, and the Pd Power Dissipation is 85 W, and Packaging is Reel, and the Package Case is TO-252-3, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and Id Continuous Drain Current is 70 A, and the Fall Time is 13 ns, and Configuration is Single.

The STD80N4F6 is MOSFET N-CH 40V 80A DPAK, that includes 11.9 ns Fall Time, they are designed to operate with a 80 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, Mounting Style is designed to work in SMD/SMT, as well as the 1 Channel Number of Channels, the device can also be used as TO-252-3 Package Case. In addition, the Packaging is Reel, the device is offered in 70 W Pd Power Dissipation, the device has a 36 nC of Qg Gate Charge, and Rds On Drain Source Resistance is 6 mOhms, and the Rise Time is 7.6 ns, and Series is N-channel STripFET, and the Technology is Si, and Transistor Polarity is N-Channel, and the Transistor Type is 1 N-Channel, and Typical Turn Off Delay Time is 46.1 ns, and the Typical Turn On Delay Time is 10.5 ns, and Unit Weight is 0.139332 oz, and the Vds Drain Source Breakdown Voltage is 40 V, and Vgs th Gate Source Threshold Voltage is 4 V.