CSD16342Q5AT

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The CSD16340Q3 is MOSFET N-CH 25V 60A 8SON, that includes NexFET? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as NexFET, Package Case is designed to work in 8-PowerTDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 1 Channel Number of Channels, the device has a 8-VSON (3.3x3.3) of Supplier Device Package, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 3W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 25V, and the Input Capacitance Ciss Vds is 1350pF @ 12.5V, and FET Feature is Logic Level Gate, and the Current Continuous Drain Id 25°C is 21A (Ta), 60A (Tc), and Rds On Max Id Vgs is 4.5 mOhm @ 20A, 8V, and the Vgs th Max Id is 1.1V @ 250μA, and Gate Charge Qg Vgs is 9.2nC @ 4.5V, and the Pd Power Dissipation is 3 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 5.2 ns, and the Rise Time is 16.1 ns, and Vgs Gate Source Voltage is 10 V, and the Id Continuous Drain Current is 21 A, and Vds Drain Source Breakdown Voltage is 25 V, and the Vgs th Gate Source Threshold Voltage is 850 mV, and Rds On Drain Source Resistance is 4.3 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 13.8 ns, and the Typical Turn On Delay Time is 4.8 ns, and Qg Gate Charge is 6.5 nC, and the Forward Transconductance Min is 121 S.

The CSD16327Q3 is MOSFET N-CH 25V 60A 8SON, that includes 1.4V @ 250μA Vgs th Max Id, they are designed to operate with a 1.2 V Vgs th Gate Source Threshold Voltage, Vgs Gate Source Voltage is shown on datasheet note for use in a 10 V, that offers Vds Drain Source Breakdown Voltage features such as 25 V, Transistor Type is designed to work in 1 N-Channel, as well as the N-Channel Transistor Polarity, the device can also be used as NexFET Tradename. In addition, the Technology is Si, the device is offered in 8-VSON (3.3x3.3) Supplier Device Package, the device has a NexFET? of Series, and Rds On Max Id Vgs is 4 mOhm @ 24A, 8V, and the Rds On Drain Source Resistance is 4 mOhms, and Qg Gate Charge is 6.2 nC, and the Power Max is 3W, and Pd Power Dissipation is 3 W, and the Packaging is Digi-ReelR Alternate Packaging, and Package Case is 8-PowerTDFN, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, and Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Input Capacitance Ciss Vds is 1300pF @ 12.5V, and Id Continuous Drain Current is 21 A, and the Gate Charge Qg Vgs is 8.4nC @ 4.5V, and FET Type is MOSFET N-Channel, Metal Oxide, and the FET Feature is Logic Level Gate, and Drain to Source Voltage Vdss is 25V, and the Current Continuous Drain Id 25°C is 60A (Tc), and Configuration is Single.

The CSD16340Q3T is "MOSFET 25V manufactured by TI. The CSD16340Q3T is available in SON-8 Package, is part of the Transistors - FETs, MOSFETs - Single, , and with support for "MOSFET 25V, N-Channel 25V 60A (Tc) 3W (Ta) Surface Mount 8-VSON (3.3x3.3), Trans MOSFET N-CH 25V 21A 8-Pin VSON-CLIP EP T/R, MOSFET 25V, -55 to 150.