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BSC079N10NSGATMA1 Infineon Technologies
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
View All Product from Infineon TechnologiesHey there! If you're on the hunt for some Infineon Technologies parts like the BSC079N10NSGATMA1, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the BSC079N10NSGATMA1, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The BSC079N10NS G is MOSFET N-Ch 100V 100A TDSON-8 OptiMOS 2, that includes OptiMOS 2 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a BSC079N10NSGATMA1 BSC079N10NSGXT SP000379590, that offers Mounting Style features such as SMD/SMT, Tradename is designed to work in OptiMOS, as well as the TDSON-8 Package Case, the device can also be used as Si Technology. In addition, the Number of Channels is 1 Channel, the device is offered in Single Quad Drain Triple Source Configuration, the device has a 1 N-Channel of Transistor Type, and Pd Power Dissipation is 156 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 11 ns, and Rise Time is 40 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 13.4 A, and the Vds Drain Source Breakdown Voltage is 100 V, and Rds On Drain Source Resistance is 7.9 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 38 ns, and the Typical Turn On Delay Time is 24 ns, and Channel Mode is Enhancement.
The BSC079N10NS is MOSFET N-CH 100V 100A TDSON-8 manufactured by INFINEON. The BSC079N10NS is available in 8-PowerTDFN Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 100A TDSON-8.
BSC079N10NS3G with circuit diagram manufactured by INF. The BSC079N10NS3G is available in TDSON-8 Package, is part of the IC Chips.
The BSC079N10NSG is MOSFET N-CH 100V 100A TDSON-8 manufactured by INFINEON. The BSC079N10NSG is available in 8-PowerTDFN Package, is part of the FETs - Single, , and with support for MOSFET N-CH 100V 100A TDSON-8.
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TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 87 nC @ 10 V | |
Vgs(th) (Max) @ Id | 4V @ 110µA | |
Rds On (Max) @ Id, Vgs | 7.9mOhm @ 50A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Package / Case | 8-PowerTDFN | |
Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 100A (Tc) | |
Supplier Device Package | PG-TDSON-8-1 | |
Drain to Source Voltage (Vdss) | 100 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 156W (Tc) | |
Vgs (Max) | ±20V | |
Series | OptiMOS™ | |
Package | Tape & Reel (TR) | |
Product Status | Not For New Designs |
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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