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IPD60N10S4L12ATMA1 Infineon Technologies
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
View All Product from Infineon TechnologiesHey there! If you're on the hunt for some Infineon Technologies parts like the IPD60N10S4L12ATMA1, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the IPD60N10S4L12ATMA1, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The IPD60N10S4L-12 is MOSFET N-Ch 100V 60A DPAK-2, that includes XPD60N10 Series, they are designed to operate with a Reel Packaging, Part Aliases is shown on datasheet note for use in a IPD60N10S4L12ATMA1 IPD60N10S4L12XT SP000866550, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PG-TO252-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 N-Channel Transistor Type, the device has a 94 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 21 ns, and the Rise Time is 3 ns, and Vgs Gate Source Voltage is +/- 16 V, and the Id Continuous Drain Current is 60 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 1.6 V, and Rds On Drain Source Resistance is 9.8 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 20 ns, and the Typical Turn On Delay Time is 4 ns, and Qg Gate Charge is 38 nC, and the Channel Mode is Enhancement.
IPD60N10S412ATMA1 with user guide, that includes 1 N-Channel Transistor Type, they are designed to operate with a N-Channel Transistor Polarity, Technology is shown on datasheet note for use in a Si, that offers Part Aliases features such as IPD60N10S4-12 SP001102936, Packaging is designed to work in Reel, as well as the TO-252-3 Package Case, the device can also be used as 1 Channel Number of Channels.
IPD60N03LG with circuit diagram manufactured by INF. The IPD60N03LG is available in TO252 Package, is part of the IC Chips.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
FCPF290N80MOSFET N-CH 800V 17A TO220F | 6.08 |
7011
Marketplace | |
CPH6350-TL-WMOSFET P-CH 30V 6A 6CPH | 0.21 |
9000
Marketplace | |
BFU910FXRF TRANS NPN 9.5V SOT343F | 0.11 |
158
Marketplace | |
FCPF290N80POWER FIELD-EFFECT TRANSISTOR, 1 | 5.51 |
7011
Marketplace |
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 3170 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V | |
Vgs(th) (Max) @ Id | 2.1V @ 46µA | |
Rds On (Max) @ Id, Vgs | 12mOhm @ 60A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
Supplier Device Package | PG-TO252-3-313 | |
Drain to Source Voltage (Vdss) | 100 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 94W (Tc) | |
Vgs (Max) | ±16V | |
Series | Automotive, AEC-Q101, HEXFET® | |
Package | Tape & Reel (TR) | |
Product Status | Active |
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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