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IPP075N15N3GXKSA1 Infineon Technologies
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
View All Product from Infineon TechnologiesHey there! If you're on the hunt for some Infineon Technologies parts like the IPP075N15N3GXKSA1, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the IPP075N15N3GXKSA1, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The IPP075N15N3 G is MOSFET N-Ch 150V 100A TO220-3 OptiMOS 3, that includes OptiMOS 3 Series, they are designed to operate with a Tube Packaging, Part Aliases is shown on datasheet note for use in a IPP075N15N3GXK IPP075N15N3GXKSA1 SP000680832, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the OptiMOS Tradename, the device can also be used as TO-220-3 Package Case. In addition, the Technology is Si, the device is offered in 1 Channel Number of Channels, the device has a Single of Configuration, and Transistor Type is 1 N-Channel, and the Pd Power Dissipation is 300 W, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 14 ns, and the Rise Time is 35 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 100 A, and Vds Drain Source Breakdown Voltage is 150 V, and the Rds On Drain Source Resistance is 7.5 mOhms, and Transistor Polarity is N-Channel, and the Typical Turn Off Delay Time is 46 ns, and Typical Turn On Delay Time is 25 ns, and the Channel Mode is Enhancement.
IPP075N15N with user guide manufactured by INFINEON. The IPP075N15N is available in TO-220 Package, is part of the FETs - Single.
IPP075N15N3G with circuit diagram manufactured by INFINEON. The IPP075N15N3G is available in TO-220AB Package, is part of the FETs - Single.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
IPP045N10N3GPOWER FIELD-EFFECT TRANSISTOR, 1 | 0.85 |
30000
Marketplace | |
IPP04CN10NGMOSFET N-CH 100V 100A TO220-3 | 1.52 |
7
Marketplace |
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 5470 pF @ 75 V | |
Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V | |
Vgs(th) (Max) @ Id | 4V @ 270µA | |
Rds On (Max) @ Id, Vgs | 7.5mOhm @ 100A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V | |
Package / Case | TO-220-3 | |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
Supplier Device Package | PG-TO220-3 | |
Drain to Source Voltage (Vdss) | 150 V | |
Mounting Type | Through Hole | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 300W (Tc) | |
Vgs (Max) | ±20V | |
Series | OptiMOS™ | |
Package | Bulk | |
Product Status | Active |
Infineon Technologies
Amidst the dawn of April 1st in 1999, Siemens Semiconductors underwent a transformative rebirth, emerging as Infineon Technologies. With newfound dynamism and adaptability, it positioned itself for triumph in the fiercely competitive and ever-evolving microelectronics arena. Infineon stands tall as a preeminent global purveyor, crafting and supplying a diverse array of semiconductors tailored for multifaceted microelectronic applications. Among its offerings are an assortment of logic products, encompassing digital, mixed-signal, and analog integrated circuits, along with discreet semiconductor manifestations.
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