ISL6609IRZ

ISL6609IRZ

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Intersil
ISL6609IRZ
IC GATE DRVR HALF-BRIDGE 8QFN
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$2.19

Price update:a months ago
Available in stock: 138
45
Serves customers in 45 countries
1000+
Worldwide Manufacturers
$140M
$140M Growth in 5 Years
50.0M+
50M Parts Shipped in 5 Years
Intersil

Intersil

Commencing January 1, 2018, Renesas and Intersil will unify, augmenting semiconductor potentials. This fusion melds Renesas' lauded MCU and SoC proficiencies with Intersil's power management and precision analog mastery. Resultant growth spans automotive, industrial, and broader domains, facilitating agile response to patrons' needs. The amalgamation, initiated in February 2017, blossomed in July under "One Global Renesas," catalyzing a synergistic effect. Join Renesas in fortifying its semiconductor market eminence.

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ISL6609IRZ Products
The ISL6609, ISL6609A is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous-rectified buck converter topology. This driver combined with an Intersil ISL63xx or ISL65xx multiphase PWM controller forms a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver is capable of driving a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented via an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6609, ISL6609A features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during PHASE node rising edge, preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6609, ISL6609A also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the schottky diode that may be utilized in a power system to protect the load from negative output voltage damage. In addition, the ISL6609A's bootstrap function is designed to prevent the BOOT capacitor from overcharging, should excessively large negative swings occur at the transitions of the PHASE node.

Feature

  • Drives Two N-Channel MOSFETs
  • Adaptive Shoot-Through Protection
  • 0.4Ω On-Resistance and 4A Sink Current Capability
  • Supports High Switching Frequency
  • Fast Output Rise and Fall
  • Ultra Low Three-State Hold-Off Time (20ns)
  • ISL6605 Replacement with Enhanced Performance
  • BOOT Capacitor Overcharge Prevention (ISL6609A)
  • Low VF Internal Bootstrap Diode
  • Low Bias Supply Current
  • Enable Input and Power-On Reset
  • QFN Package
  • Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat No Leads-Product Outline
  • Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
  • Pb-Free (RoHS Compliant)

Product Attributes

TYPE DESCRIPTION Select all
Voltage - Supply 4.5V ~ 5.5V
Logic Voltage - VIL, VIH 1V, 2V
Current - Peak Output (Source, Sink) -, 4A
Input Type Non-Inverting
Package Tube
High Side Voltage - Max (Bootstrap) 36 V
Product Status Obsolete
Rise / Fall Time (Typ) 8ns, 8ns
Programmable Not Verified
Operating Temperature -40°C ~ 125°C (TJ)
Driven Configuration Half-Bridge
Mounting Type Surface Mount
Channel Type Synchronous
Package / Case 8-VQFN Exposed Pad
Number of Drivers 2
Supplier Device Package 8-QFN (3x3)
Gate Type N-Channel MOSFET

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$2.19

Price update:a months ago
Available in stock: 138
Intersil

Intersil

Commencing January 1, 2018, Renesas and Intersil will unify, augmenting semiconductor potentials. This fusion melds Renesas' lauded MCU and SoC proficiencies with Intersil's power management and precision analog mastery. Resultant growth spans automotive, industrial, and broader domains, facilitating agile response to patrons' needs. The amalgamation, initiated in February 2017, blossomed in July under "One Global Renesas," catalyzing a synergistic effect. Join Renesas in fortifying its semiconductor market eminence.

View All Product from Intersil

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