IRFZ44ZLPBF

IRFZ44ZLPBF

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IRFZ44ZLPBF
IRFZ44 - 12V-300V N-CHANNEL POWE
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$1.04

Price update:a months ago
Available in stock: 1635
45
Serves customers in 45 countries
1000+
Worldwide Manufacturers
$140M
$140M Growth in 5 Years
50.0M+
50M Parts Shipped in 5 Years
International Rectifier

International Rectifier

Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.

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IRFZ44ZLPBF Products
N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Feature

  • Optimized for broadest availability from distribution partners
  • Product qualification according to JEDEC standard
  • Optimized for 10 V gate-drive voltage (called normal level)
  • Industry standard through-hole power package
  • High-current carrying capability package (up to 195 A, die-size dependent)
  • Capable of being wave-soldered

Product Attributes

TYPE DESCRIPTION Select all
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs(th) (Max) @ Id 4V @ 250µA
Rds On (Max) @ Id, Vgs 13.9mOhm @ 31A, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25°C 51A (Tc)
Supplier Device Package TO-262
Drain to Source Voltage (Vdss) 55 V
Mounting Type Through Hole
Technology MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel
Power Dissipation (Max) 80W (Tc)
Vgs (Max) ±20V
Series HEXFET®
Package Bulk
Product Status Active

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$1.04

Price update:a months ago
Available in stock: 1635
International Rectifier

International Rectifier

Upon the inception of April 1st, 1999, Siemens Semiconductors transmuted into Infineon Technologies. A kinetic and adaptable entity, finely calibrated for triumph within the fiercely contested and ceaselessly shifting realm of microelectronics. Infineon stands as a preeminent worldwide architect, fabricator, and purveyor of an expansive spectrum of semiconductors harnessed across manifold microelectronic deployments. The expanse of Infineon's wares encompasses logic commodities, encompassing the digital, mixed-signal, and analog integrative matrices, alongside segregated semiconductor manifestations.

View All Product from International Rectifier

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