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MT29F4G08ABADAH4-AATX:D TR Micron Technology Inc.
Micron Technology Inc.
Micron pioneers inventive solutions driving tech breakthroughs like AI, IoT, self-driving cars, and space exploration. Innovating data management revolutionizes global progress. Over 40 years, 40,000 patents contributed. A diverse team of 34,000 spans 18 nations, fostering inclusive brilliance.
View All Product from Micron Technology Inc.Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#).
This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densi ties with no board redesign.
A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.
This device has an internal 4-bit ECC that can be enabled using the GET/SET features.
See Internal ECC and Spare Area Mapping for ECC for more information.
• Open NAND Flash Interface (ONFI) 1.0-compliant1• Single-level cell (SLC) technology• Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks• Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 25ns (1.8V)• Array performance – Read page: 25µs 3 – Program page: 200µs (TYP: 1.8V, 3.3V)3 – Erase block: 700µs (TYP)• Command set: ONFI NAND Flash Protocol• Advanced command set – Program page cache mode4 – Read page cache mode 4 – One-time programmable (OTP) mode – Two-plane commands 4 – Interleaved die (LUN) operations – Read unique ID – Block lock (1.8V only) – Internal data move• Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion• WP# signal: Write protect entire device• First block (block address 00h) is valid when ship ped from factory with ECC. For minimum required ECC, see Error Management.• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000• RESET (FFh) required as first command after power-on• Alternate method of device initialization (Nand_In it) after power up (contact factory)• Internal data move operations supported within the plane from which data is read• Quality and reliability – Data retention: 10 years – Endurance: 100,000 PROGRAM/ERASE cycles• Operating voltage range – VCC: 2.7–3.6V – VCC: 1.7–1.95V• Operating temperature: – Commercial: 0°C to +70°C – Industrial (IT): –40ºC to +85ºC• Package – 48-pin TSOP type 1, CPL2 – 63-ball VFBGA
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1. Every electronic component you purchase from us comes with a 365-Day Warranty. We stand behind the quality of our products.
2. Should you receive any item that isn't in perfect condition, we are committed to arranging a refund or replacement responsibly. Please note that items must be in their original condition for these options to be available.
A: Our professional business development department conducts rigorous testing and verification of the qualifications of original manufacturers and agents of . All suppliers must undergo and pass our qualification review before they are allowed to list their MT29F4G08ABADAH4-AATX:D TR devices on our platform. We prioritize the sourcing channels and quality of MT29F4G08ABADAH4-AATX:D TR products above everything else, ensuring thorough supplier audits so you can make your purchase with utmost confidence.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
MT41K64M16TW-107 AIT:JIC DRAM 1GBIT PAR 96FBGA | 3.03 |
2214
Marketplace | |
MT29F256G08CJABBWP-12IT:BIC FLASH 256GBIT PAR 48TSOP I | 1033.50 |
4
Marketplace | |
MT29F32G08ABCABH1-10ITZ:AIC FLASH 32GBIT PARALLEL 100VBGA | 20.67 |
1000
Marketplace | |
MT29F32G08CBADBWP-12IT:D TRIC FLASH 32GBIT PAR 48TSOP I | 13.78 |
2833
Marketplace | |
VSC7429XJG-02IC TELECOM INTERFACE 26PORT | 28.94 |
1523
Marketplace |
IC DRAM 1GBIT PAR 96FBGA
IC FLASH 256GBIT PAR 48TSOP I
IC FLASH 32GBIT PARALLEL 100VBGA
IC FLASH 32GBIT PAR 48TSOP I
IC TELECOM INTERFACE 26PORT
TYPE | DESCRIPTION | Select all |
---|---|---|
Memory Type | Non-Volatile | |
Programmable | Not Verified | |
Product Status | Active | |
Memory Interface | Parallel | |
Package | Tape & Reel (TR) | |
Memory Organization | 512M x 8 | |
Memory Size | 4Gbit | |
Technology | FLASH - NAND | |
Supplier Device Package | 63-VFBGA (9x11) | |
Memory Format | FLASH | |
Package / Case | 63-VFBGA | |
Mounting Type | Surface Mount | |
Operating Temperature | -40°C ~ 105°C (TA) | |
Voltage - Supply | 2.7V ~ 3.6V |
Micron Technology Inc.
Micron pioneers inventive solutions driving tech breakthroughs like AI, IoT, self-driving cars, and space exploration. Innovating data management revolutionizes global progress. Over 40 years, 40,000 patents contributed. A diverse team of 34,000 spans 18 nations, fostering inclusive brilliance.
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