1N5418E3

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The 1N5417TR is DIODE AVALANCHE 200V 3A SOD64, that includes 1N54xx Series, they are designed to operate with a Fast Recovery Rectifiers Product, Packaging is shown on datasheet note for use in a Tape & Reel (TR) Alternate Packaging, that offers Unit Weight features such as 0.030265 oz, Mounting Style is designed to work in Through Hole, as well as the SOD-64, Axial Package Case, the device can also be used as Through Hole Mounting Type. In addition, the Supplier Device Package is SOD-64, the device is offered in Single Configuration, the device has a Standard Recovery >500ns, > 200mA (Io) of Speed, and Diode Type is Avalanche, and the Current Reverse Leakage Vr is 1μA @ 200V, and Voltage Forward Vf Max If is 1.5V @ 9A, and the Voltage DC Reverse Vr Max is 200V, and Current Average Rectified Io is 3A, and the Reverse Recovery Time trr is 100ns, it has an Operating Temperature Junction range of -55°C ~ 175°C, it has an Maximum Operating Temperature range of + 175 C, it has an Minimum Operating Temperature range of - 55 C, and the Vf Forward Voltage is 1.1 V, and Vr Reverse Voltage is 200 V, and the Ir Reverse Current is 1 uA, and If Forward Current is 3 A, and the Max Surge Current is 100 A, and Recovery Time is 100 ns.

The 1N5417-TAP is DIODE AVALANCHE 200V 3A SOD64, that includes 200 V Vr Reverse Voltage, they are designed to operate with a 1.5V @ 9A Voltage Forward Vf Max If, Voltage DC Reverse Vr Max is shown on datasheet note for use in a 200V, that offers Vf Forward Voltage features such as 1.1 V, Unit Weight is designed to work in 0.030265 oz, as well as the SOD-64 Supplier Device Package, the device can also be used as Standard Recovery >500ns, > 200mA (Io) Speed. In addition, the Series is 1N54xx, the device is offered in 100ns Reverse Recovery Time trr, the device has a 100 ns of Recovery Time, and Product is Fast Recovery Rectifiers, and the Packaging is Tape & Box (TB) Alternate Packaging, and Package Case is SOD-64, Axial, it has an Operating Temperature Junction range of -55°C ~ 175°C, and Mounting Style is Through Hole, and the Mounting Type is Through Hole, it has an Minimum Operating Temperature range of - 55 C, and the Max Surge Current is 100 A, it has an Maximum Operating Temperature range of + 175 C, and the Ir Reverse Current is 1 uA, and If Forward Current is 3 A, and the Diode Type is Avalanche, and Current Reverse Leakage Vr is 1μA @ 200V, and the Current Average Rectified Io is 3A, and Configuration is Single.

The 1N5418 is DIODE GEN PURP 400V 3A B-MELF, that includes Single Configuration, they are designed to operate with a 3A Current Average Rectified Io, Current Reverse Leakage Vr is shown on datasheet note for use in a 1μA @ 400V, that offers Diode Type features such as Standard, If Forward Current is designed to work in 4.5 A, as well as the 20 uA Ir Reverse Current, it has an Maximum Operating Temperature range of + 175 C. In addition, the Max Surge Current is 150 A, it has an Minimum Operating Temperature range of - 65 C, the device has a Through Hole of Mounting Type, and Mounting Style is Axial, it has an Operating Temperature Junction range of -65°C ~ 175°C, it has an Operating Temperature Range range of - 65 C to + 175 C, and the Package Case is SQ-MELF, B, and Packaging is Bulk, and the Product is Fast Recovery Rectifiers, and Recovery Time is 150 ns, and the Reverse Recovery Time trr is 150ns, and Speed is Fast Recovery = 200mA (Io), and the Supplier Device Package is B, SQ-MELF, and Vf Forward Voltage is 1.1 V, and the Voltage DC Reverse Vr Max is 400V, and Voltage Forward Vf Max If is 1.5V @ 9A, and the Vr Reverse Voltage is 400 V.

The 1N5417US is DIODE GEN PURP 200V 3A D5B, that includes Surface Mount Mounting Type, they are designed to operate with a Standard Diode Type, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Speed features such as Fast Recovery = 200mA (Io), Package Case is designed to work in E-MELF, as well as the D-5B Supplier Device Package, the device can also be used as Bulk Packaging, it has an Operating Temperature Junction range of -65°C ~ 175°C, the device is offered in 3A Current Average Rectified Io, the device has a 200V of Voltage DC Reverse Vr Max, and Current Reverse Leakage Vr is 1μA @ 200V, and the Reverse Recovery Time trr is 150ns, and Voltage Forward Vf Max If is 1.5V @ 9A.