APT77N60SC6

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The APT75M50L is MOSFET Power MOSFET - MOS8, that includes Bulk Packaging, they are designed to operate with a 0.373904 oz Unit Weight, Mounting Style is shown on datasheet note for use in a Through Hole, that offers Package Case features such as TO-264-3, Technology is designed to work in Si, as well as the 1 Channel Number of Channels, the device can also be used as 1 N-Channel Configuration. In addition, the Pd Power Dissipation is 1.04 kW, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 39 ns, and the Rise Time is 55 ns, and Vgs Gate Source Voltage is +/- 30 V, and the Id Continuous Drain Current is 75 A, and Vds Drain Source Breakdown Voltage is 500 V, and the Vgs th Gate Source Threshold Voltage is 3 V, and Rds On Drain Source Resistance is 75 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 120 ns, and the Typical Turn On Delay Time is 45 ns, and Qg Gate Charge is 290 nC, and the Forward Transconductance Min is 55 S, and Channel Mode is Enhancement.

The APT77N60BC6 is MOSFET Power MOSFET - CoolMOS, that includes 3 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 600 V, that offers Unit Weight features such as 1.340411 oz, Typical Turn On Delay Time is designed to work in 18 ns, as well as the 110 ns Typical Turn Off Delay Time, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 27 ns Rise Time, the device has a 37 mOhms of Rds On Drain Source Resistance, and Qg Gate Charge is 260 nC, and the Pd Power Dissipation is 481 W, and Packaging is Reel, and the Package Case is TO-247-3, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 77 A, and Fall Time is 8 ns, and the Channel Mode is Enhancement.

The APT77N60JC3 is Discrete Semiconductor Modules Power MOSFET - CoolMOS, that includes Single Configuration, they are designed to operate with a 8 ns Fall Time, Id Continuous Drain Current is shown on datasheet note for use in a 77 A, that offers Mounting Style features such as Screw, Package Case is designed to work in SOT-227-4, as well as the Bulk Packaging, the device can also be used as 568 W Pd Power Dissipation. In addition, the Product is Power MOSFET Modules, the device is offered in 30 mOhms Rds On Drain Source Resistance, the device has a 27 ns of Rise Time, and Tradename is ISOTOP, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 110 ns, and the Typical Turn On Delay Time is 18 ns, and Unit Weight is 1.058219 oz, and the Vds Drain Source Breakdown Voltage is 600 V, and Vgs Gate Source Voltage is 20 V, and the Vgs th Gate Source Threshold Voltage is 2.1 V.