FQP13N06 datasheet
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FQP13N06 onsemi
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
View All Product from onsemiHey there! If you're on the hunt for some onsemi parts like the FQP13N06, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the FQP13N06, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The FQP12P20 is MOSFET P-CH 200V 11.5A TO-220, that includes Tube Packaging, they are designed to operate with a FQP12P20_NL Part Aliases, Unit Weight is shown on datasheet note for use in a 0.063493 oz, that offers Mounting Style features such as Through Hole, Package Case is designed to work in TO-220-3, as well as the Si Technology, the device can also be used as 1 Channel Number of Channels. In addition, the Configuration is Single, the device is offered in 1 P-Channel Transistor Type, the device has a 120 W of Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 60 ns, and the Rise Time is 195 ns, and Vgs Gate Source Voltage is 30 V, and the Id Continuous Drain Current is 11.5 A, and Vds Drain Source Breakdown Voltage is - 200 V, and the Rds On Drain Source Resistance is 470 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 40 ns, and Typical Turn On Delay Time is 20 ns, and the Forward Transconductance Min is 6.4 S, and Channel Mode is Enhancement.
The FQP12P10 is MOSFET P-CH 100V 11.5A TO-220, that includes 30 V Vgs Gate Source Voltage, they are designed to operate with a - 100 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.063493 oz, that offers Typical Turn On Delay Time features such as 15 ns, Typical Turn Off Delay Time is designed to work in 35 ns, as well as the 1 P-Channel Transistor Type, the device can also be used as P-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 160 ns Rise Time, the device has a 290 mOhms of Rds On Drain Source Resistance, and Pd Power Dissipation is 75 W, and the Packaging is Tube, and Package Case is TO-220-3, and the Number of Channels is 1 Channel, and Mounting Style is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 175 C, and the Id Continuous Drain Current is 11.5 A, and Forward Transconductance Min is 6.7 S, and the Fall Time is 60 ns, and Configuration is Single, and the Channel Mode is Enhancement.
FQP12N65C with circuit diagram manufactured by FSC. The FQP12N65C is available in TO-220 Package, is part of the IC Chips.
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A: Our professional business development department conducts rigorous testing and verification of the qualifications of original manufacturers and agents of . All suppliers must undergo and pass our qualification review before they are allowed to list their FQP13N06 devices on our platform. We prioritize the sourcing channels and quality of FQP13N06 products above everything else, ensuring thorough supplier audits so you can make your purchase with utmost confidence.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
FQP12N60MOSFET N-CH 600V 10.5A TO220-3 | 0.28 |
85
Marketplace | |
FQP12N60MOSFET N-CH 600V 10.5A TO220-3 | Price negotiable |
85
Marketplace | |
FQP11N40MOSFET N-CH 400V 11.4A TO220-3 | Price negotiable |
325
Marketplace | |
FQP10N20MOSFET N-CH 200V 10A TO220-3 | 0.14 |
648
Marketplace | |
FQP10N60CMOSFET N-CH 600V 9.5A TO220-3 | Price negotiable |
15260
Marketplace | |
FQP10N60CMOSFET N-CH 600V 9.5A TO220-3 | 0.34 |
15260
Marketplace | |
FQP11N40MOSFET N-CH 400V 11.4A TO220-3 | 0.28 |
325
Marketplace |
MOSFET N-CH 600V 10.5A TO220-3
MOSFET N-CH 600V 10.5A TO220-3
MOSFET N-CH 400V 11.4A TO220-3
MOSFET N-CH 200V 10A TO220-3
MOSFET N-CH 600V 9.5A TO220-3
MOSFET N-CH 600V 9.5A TO220-3
MOSFET N-CH 400V 11.4A TO220-3
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Rds On (Max) @ Id, Vgs | 135mOhm @ 6.5A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Package / Case | TO-220-3 | |
Current - Continuous Drain (Id) @ 25°C | 13A (Tc) | |
Supplier Device Package | TO-220-3 | |
Drain to Source Voltage (Vdss) | 60 V | |
Mounting Type | Through Hole | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 45W (Tc) | |
Vgs (Max) | ±25V | |
Series | QFET® | |
Package | Tube | |
Product Status | Obsolete |
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
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