FQP13N10

FQP13N10

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onsemi
FQP13N10
MOSFET N-CH 100V 12.8A TO220-3
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$0.55

Price update:a months ago
Available in stock: 9000
45
Serves customers in 45 countries
1000+
Worldwide Manufacturers
$140M
$140M Growth in 5 Years
50.0M+
50M Parts Shipped in 5 Years
onsemi

onsemi

Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.

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FQP13N10 Products

Description
This N-Channel enhancement mode power MOSFET is pro
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.

Features
• 12.8 A, 100 V, Rds(on)= 180 mΩ(Max.) @ Vgs= 10 V, Id= 6.4 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

Description
This N-Channel enhancement mode power MOSFET is pro
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.

Features
• 12.8 A, 100 V, Rds(on)= 180 mΩ(Max.) @ Vgs= 10 V, Id= 6.4 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

Feature

  • 12.8A, 100V, RDS(on)= 180mΩ(Max.) @VGS = 10 V, ID = 6.4A
  • Low gate charge ( Typ. 12nC)
  • Low Crss ( Typ. 20pF)
  • 100% avalanche tested
  • 175°C maximum junction temperature rating

Applications

  • Other Audio & Video

Product Attributes

TYPE DESCRIPTION Select all
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs(th) (Max) @ Id 4V @ 250µA
Rds On (Max) @ Id, Vgs 180mOhm @ 6.4A, 10V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package / Case TO-220-3
Current - Continuous Drain (Id) @ 25°C 12.8A (Tc)
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 100 V
Mounting Type Through Hole
Technology MOSFET (Metal Oxide)
Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel
Power Dissipation (Max) 65W (Tc)
Vgs (Max) ±25V
Series QFET®
Package Tube
Product Status Obsolete

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$0.55

Price update:a months ago
Available in stock: 9000
onsemi

onsemi

Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.

View All Product from onsemi

Blog