NTLUS3192PZTAG

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The NTLUD3A50PZTAG is MOSFET 2P-CH 20V 2.8A UDFN, that includes NTLUD3A50PZ Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Package Case features such as 6-UDFN Exposed Pad, Technology is designed to work in Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device can also be used as Surface Mount Mounting Type. In addition, the Number of Channels is 2 Channel, the device is offered in 6-UDFN (2x2) Supplier Device Package, the device has a Dual of Configuration, and FET Type is 2 P-Channel (Dual), and the Power Max is 500mW, and Transistor Type is 2 P-Channel, and the Drain to Source Voltage Vdss is 20V, and Input Capacitance Ciss Vds is 920pF @ 15V, and the FET Feature is Logic Level Gate, and Current Continuous Drain Id 25°C is 2.8A, and the Rds On Max Id Vgs is 50 mOhm @ 4A, 4.5V, and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 10.4nC @ 4.5V, and Pd Power Dissipation is 1.4 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 30 ns, and Rise Time is 12 ns, and the Vgs Gate Source Voltage is 8 V, and Id Continuous Drain Current is - 5.6 A, and the Vds Drain Source Breakdown Voltage is - 20 V, and Vgs th Gate Source Threshold Voltage is 0.5 V, and the Rds On Drain Source Resistance is 50 mOhms, and Transistor Polarity is P-Channel, and the Typical Turn Off Delay Time is 39 ns, and Typical Turn On Delay Time is 7 ns, and the Qg Gate Charge is 10.4 nC, and Forward Transconductance Min is 16 S.

The NTLUF4189NZTAG is MOSFET N-CH 30V 1.2A 6UDFN, that includes 1.1 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 8 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 30 V, that offers Typical Turn On Delay Time features such as 7 ns, Typical Turn Off Delay Time is designed to work in 10.2 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in NTLUF4189NZ Series, the device has a 4.5 ns of Rise Time, and Rds On Drain Source Resistance is 145 mOhms, and the Qg Gate Charge is 1.4 nC, and Pd Power Dissipation is 1.3 W, and the Packaging is Reel, and Package Case is UDFN-6, and the Number of Channels is 1 Channel, and Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 1.5 A, and Forward Transconductance Min is 1.1 S, and the Fall Time is 1.2 ns, and Configuration is Single.

The NTLUD3A260PZTBG is MOSFET 2P-CH 20V 1.3A UDFN6, that includes Dual Configuration, they are designed to operate with a 1.3A Current Continuous Drain Id 25°C, Drain to Source Voltage Vdss is shown on datasheet note for use in a 20V, that offers FET Feature features such as Logic Level Gate, FET Type is designed to work in 2 P-Channel (Dual), as well as the 4.2nC @ 4.5V Gate Charge Qg Vgs, the device can also be used as 300pF @ 10V Input Capacitance Ciss Vds, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a Surface Mount of Mounting Type, and Mounting Style is SMD/SMT, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Package Case is 6-UFDFN Exposed Pad, and the Packaging is Tape & Reel (TR), and Pd Power Dissipation is 0.8 W, and the Power Max is 500mW, and Rds On Max Id Vgs is 200 mOhm @ 2A, 4.5V, and the Series is NTLUD3A260P, and Supplier Device Package is 6-UDFN (1.6x1.6), and the Vgs th Max Id is 1V @ 250μA.

NTLUD3A50PZTBG with EDA / CAD Models, that includes Tape & Reel (TR) Packaging, they are designed to operate with a Surface Mount Mounting Type, Technology is shown on datasheet note for use in a Si, that offers Series features such as NTLUD3A50PZ, FET Feature is designed to work in Logic Level Gate, as well as the 920pF @ 15V Input Capacitance Ciss Vds, the device can also be used as 6-UDFN Exposed Pad Package Case. In addition, the Supplier Device Package is 6-UDFN (2x2), it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a 500mW of Power Max, and Rds On Max Id Vgs is 50 mOhm @ 4A, 4.5V, and the Drain to Source Voltage Vdss is 20V, and Current Continuous Drain Id 25°C is 2.8A, and the FET Type is 2 P-Channel (Dual), and Vgs th Max Id is 1V @ 250μA, and the Gate Charge Qg Vgs is 10.4nC @ 4.5V.