NTMFS6H848NT1G datasheet
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NTMFS6H848NT1G onsemi
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
View All Product from onsemiHey there! If you're on the hunt for some onsemi parts like the NTMFS6H848NT1G, you’ve come to the right place at szcomponents Electronics. We stock a wide range of electronics from the world’s top brands. Each piece we carry, especially the NTMFS6H848NT1G, is not only top-notch but also passes through rigorous checks by our own testing team to ensure it meets all the standards you need.
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The NTMFS6B14NT1G is MOSFET NFET SO8FL 100V 15A 14MOH, that includes Reel Packaging, they are designed to operate with a SMD/SMT Mounting Style, Package Case is shown on datasheet note for use in a SO-8FL, that offers Technology features such as Si, Number of Channels is designed to work in 1 Channel, as well as the Single Triple Source Configuration, the device can also be used as 1 N-Channel Transistor Type. In addition, the Pd Power Dissipation is 77 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 6.8 ns, and the Rise Time is 39 ns, and Vgs Gate Source Voltage is 20 V, and the Id Continuous Drain Current is 50 A, and Vds Drain Source Breakdown Voltage is 100 V, and the Vgs th Gate Source Threshold Voltage is 2 V, and Rds On Drain Source Resistance is 12.2 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 17 ns, and the Typical Turn On Delay Time is 9.6 ns, and Qg Gate Charge is 20 nC, and the Channel Mode is Enhancement.
NTMFS6B05NT1G with user guide, that includes 2 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 100 V, that offers Typical Turn On Delay Time features such as 14 ns, Typical Turn Off Delay Time is designed to work in 39 ns, as well as the 1 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 43 ns Rise Time, the device has a 6.5 mOhms of Rds On Drain Source Resistance, and Qg Gate Charge is 44 nC, and the Pd Power Dissipation is 138 W, and Packaging is Reel, and the Package Case is SO-8FL, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 104 A, and the Fall Time is 16 ns, and Configuration is Single Triple Source, and the Channel Mode is Enhancement.
NTMFS6B03NT3G with circuit diagram, that includes 1 Channel Number of Channels, they are designed to operate with a Reel Packaging, Technology is shown on datasheet note for use in a Si, that offers Transistor Polarity features such as N-Channel, Transistor Type is designed to work in 1 N-Channel.
NTMFS6B14NT3G with EDA / CAD Models, that includes Si Technology, they are designed to operate with a Reel Packaging, Transistor Polarity is shown on datasheet note for use in a N-Channel, that offers Transistor Type features such as 1 N-Channel, Number of Channels is designed to work in 1 Channel.
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Mfr Part # | Price ($) | Quantity Available | |
---|---|---|---|
NTMFS5C430NT1GMOSFET N-CH 40V 35A/185A 5DFN | 2.76 |
200000
Marketplace | |
NTMFS0D55N03CGT1GWIDE SOA | 1.38 |
60000
Marketplace | |
NTMFS5H610NLT1GMOSFET N-CH 60V 12A 44A 5DFN | 2.76 |
2484
Marketplace | |
NTMFS5C410NT1GMOSFET N-CH 40V 46A/300A 5DFN | 0.85 |
7500
Marketplace | |
NTMFS5H600NLT1GMOSFET N-CH 60V 35A/250A 5DFN | 4.41 |
36000
Marketplace | |
NTMFS5C628NLT3GMOSFET N-CH 60V 5DFN | 3.82 |
4850
Marketplace |
MOSFET N-CH 40V 35A/185A 5DFN
WIDE SOA
MOSFET N-CH 60V 12A 44A 5DFN
MOSFET N-CH 40V 46A/300A 5DFN
MOSFET N-CH 60V 35A/250A 5DFN
MOSFET N-CH 60V 5DFN
TYPE | DESCRIPTION | Select all |
---|---|---|
Input Capacitance (Ciss) (Max) @ Vds | 1180 pF @ 40 V | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
Vgs(th) (Max) @ Id | 4V @ 70µA | |
Rds On (Max) @ Id, Vgs | 9.4mOhm @ 10A, 10V | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Package / Case | 8-PowerTDFN, 5 Leads | |
Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 57A (Tc) | |
Supplier Device Package | 5-DFN (5x6) (8-SOFL) | |
Drain to Source Voltage (Vdss) | 80 V | |
Mounting Type | Surface Mount | |
Technology | MOSFET (Metal Oxide) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
FET Type | N-Channel | |
Power Dissipation (Max) | 3.7W (Ta), 73W (Tc) | |
Vgs (Max) | ±20V | |
Package | Tape & Reel (TR) | |
Product Status | Active |
onsemi
Onsemi pioneers eco-innovations, emboldening worldwide clientele to curtail energy usage. Their diverse array encompasses power, signal management, logic solutions, catering to automotive, communication, computing, consumer, industrial domains. A responsive, reliable supply chain underscores their commitment, encompassing North America, Europe, Asia markets.
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