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BUL1102EFP STMicroelectronics
STMicroelectronics
STMicroelectronics is a leading global semiconductor company known for pioneering cutting-edge solutions across microelectronics. With unmatched silicon expertise, potent manufacturing, rich IP, and strategic alliances, it's at the forefront of SoC technology, guiding convergence trends.
View All Product from STMicroelectronicsThis is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil? protection usually necessary in typical converters for lamp ballast.
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TYPE | DESCRIPTION | Select all |
---|---|---|
DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 2A, 5V | |
Current - Collector Cutoff (Max) | 100µA | |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 400mA, 2A | |
Voltage - Collector Emitter Breakdown (Max) | 450 V | |
Current - Collector (Ic) (Max) | 4 A | |
Supplier Device Package | TO-220FP | |
Transistor Type | NPN | |
Package / Case | TO-220-3 Full Pack | |
Mounting Type | Through Hole | |
Operating Temperature | 150°C (TJ) | |
Power - Max | 30 W | |
Package | Tube | |
Product Status | Active |
STMicroelectronics
STMicroelectronics is a leading global semiconductor company known for pioneering cutting-edge solutions across microelectronics. With unmatched silicon expertise, potent manufacturing, rich IP, and strategic alliances, it's at the forefront of SoC technology, guiding convergence trends.
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