PD57060S-E

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The PD57030S-E is RF MOSFET Transistors POWER R.F., that includes PD57030-E Series, they are designed to operate with a RF Power MOSFET Type, Packaging is shown on datasheet note for use in a Tube, that offers Mounting Style features such as SMD/SMT, Package Case is designed to work in PowerSO-10RF (Straight Lead), as well as the Si Technology, the device can also be used as 14 dB at 945 MHz Gain. In addition, the Output Power is 30 W, the device is offered in 52.8 W Pd Power Dissipation, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, and the Operating Frequency is 1 GHz, and Vgs Gate Source Voltage is +/- 20 V, and the Id Continuous Drain Current is 4 A, and Vds Drain Source Breakdown Voltage is 65 V, and the Transistor Polarity is N-Channel.

The PD57060-E is RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic Fam, that includes +/- 20 V Vgs Gate Source Voltage, they are designed to operate with a 65 V Vds Drain Source Breakdown Voltage, Type is shown on datasheet note for use in a RF Power MOSFET, that offers Transistor Polarity features such as N-Channel, Technology is designed to work in Si, as well as the PD57060-E Series, the device can also be used as 79 W Pd Power Dissipation. In addition, the Packaging is Tube, the device is offered in PowerSO-10RF (Formed Lead) Package Case, the device has a 60 W of Output Power, and Operating Frequency is 1 GHz, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 65 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 7 A, and the Gain is 14.3 dB at 945 MHz.

The PD57045-E is RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch, that includes 13 dB at 945 MHz Gain, they are designed to operate with a 5 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 65 C, Mounting Style is designed to work in SMD/SMT, as well as the 1 GHz Operating Frequency, the device can also be used as 45 W Output Power. In addition, the Package Case is PowerSO-10RF (Formed Lead), the device is offered in Tube Packaging, the device has a 73 W of Pd Power Dissipation, and Series is PD57045-E, and the Technology is Si, and Transistor Polarity is N-Channel, and the Type is RF Power MOSFET, and Vds Drain Source Breakdown Voltage is 65 V, and the Vgs Gate Source Voltage is +/- 20 V.

PD57045TR-E with EDA / CAD Models, that includes Si Technology, they are designed to operate with a RF Power MOSFET Type, Series is shown on datasheet note for use in a PD57045-E.